参数资料
型号: SI8405AB-A-IS1
厂商: Silicon Laboratories Inc
文件页数: 13/34页
文件大小: 0K
描述: IC ISOLATOR 10M 6CH 2.5K 16SOIC
视频文件: Digital Isolation Overview
Digital Isolators vs. Optocouplers
标准包装: 48
输入 - 1 侧/2 侧: 3/3
通道数: 6
电源电压: 3 V ~ 5.5 V
电压 - 隔离: 2500Vrms
数据速率: 10Mbps
传输延迟: 20ns
输出类型: 开路漏极
封装/外壳: 16-SOIC(0.154",3.90mm 宽)
供应商设备封装: 16-SOIC N
包装: 管件
工作温度: -40°C ~ 125°C
Si840x
3. Device Operation
Device behavior during start-up, normal operation, and shutdown is shown in Figure 7, where UVLO+ and UVLO–
are the positive-going and negative-going thresholds respectively. Refer to Table 12 to determine outputs when
power supply (VDD) is not present.
3.1. Device Startup
Outputs are held low during powerup until VDD is above the UVLO threshold for time period tSTART. Following
this, the outputs follow the states of inputs.
3.2. Under Voltage Lockout
Under Voltage Lockout (UVLO) is provided to prevent erroneous operation during device startup and shutdown or
when VDD is below its specified operating circuits range. Both Side A and Side B each have their own under
voltage lockout monitors. Each side can enter or exit UVLO independently. For example, Side A unconditionally
enters UVLO when AVDD falls below AVDD UVLO– and exits UVLO when AVDD rises above AVDD UVLO+ . Side B
operates the same as Side A with respect to its BVDD supply.
UVLO+
UVLO-
AVDD
UVLO+
UVLO-
BVDD
INPUT
tSTART
tSD
tSTART
tSTART
tPH L
tPLH
OUTPUT
Figure 7. Device Behavior during Normal Operation
Rev. 1.6
13
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相关代理商/技术参数
参数描述
Si8405AB-A-IS1R 功能描述:隔离器接口集成电路 2.5kV Bidrect I2C Isoltr/2UniCH 1.7MHz RoHS:否 制造商:Texas Instruments 通道数量:2 传播延迟时间: 电源电压-最大:5.5 V 电源电压-最小:3 V 电源电流:3.6 mA 功率耗散: 最大工作温度:+ 125 C 安装风格: 封装 / 箱体:SOIC-8 封装:Tube
Si8405AB-B-IS1 功能描述:隔离器接口集成电路 2.5kV Bidrect I2C Isoltr/2UniCH 1.7MHz RoHS:否 制造商:Texas Instruments 通道数量:2 传播延迟时间: 电源电压-最大:5.5 V 电源电压-最小:3 V 电源电流:3.6 mA 功率耗散: 最大工作温度:+ 125 C 安装风格: 封装 / 箱体:SOIC-8 封装:Tube
SI8405AB-B-IS1R 功能描述:隔离器接口集成电路 2.5kV Bidrect I2C Isoltr/2UniCH 1.7MHz RoHS:否 制造商:Texas Instruments 通道数量:2 传播延迟时间: 电源电压-最大:5.5 V 电源电压-最小:3 V 电源电流:3.6 mA 功率耗散: 最大工作温度:+ 125 C 安装风格: 封装 / 箱体:SOIC-8 封装:Tube
SI8405DB 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:12-V P-Channel 1.8-V (G-S) MOSFET
SI8405DB-T1 制造商:Vishay Intertechnologies 功能描述: