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参数资料
| 型号： | SI8417DB |
| 厂商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 1.8-V (G-S) MOSFET |
| 中文描述： | P通道的1.8 V（GS）的MOSFET的 |
| 文件页数： | 2/3页 |
| 文件大小： | 191K |
| 代理商： | SI8417DB |
Vishay Siliconix
2
SPICE Device Model Si8417DB
www.vishay.com
Document Number: 74135
S-52282
Rev. A, 31-Oct-05
SPECIFICATIONS (T
J
= 25
°
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Simulated
Data
Measured
Data
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
=
250
μ
A
0.80
V
On-State Drain Current
a
I
D(on)
V
DS
≤
5V, V
GS
=
4.5V
191
A
V
GS
=
4.5V, I
D
=
1 A
0.0184
0.0174
V
GS
=
2.5V, I
D
=
1
Α
0.0211
0.0214
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
=
1.8V, I
D
=
1
Α
0.0252
0.0270
Forward Transconductance
a
g
fs
V
DS
=
4V, I
D
=
1 A
20
8.3
S
Diode Forward Voltage
a
Dynamic
b
V
SD
I
S
=
1A, V
GS
= 0 V
0.78
0.80
V
Input Capacitance
C
iss
3228
2220
Output Capacitance
C
oss
913
865
Reverse Transfer Capacitance
C
rss
V
DS
=
6 V, V
GS
= 0 V, f = 1 MHz
542
555
pF
V
DS
=
6 V, V
GS
=
5 V, I
D
=
1 A
25
38
Total Gate Charge
Q
g
23
35
Gate-Source Charge
Q
gs
7.3
7.3
Gate-Drain Charge
Q
gd
V
DS
=
6 V, V
GS
=
4.5 V, I
D
=
1 A
5.9
5.9
nC
Notes
a. Pulse test; pulse width
≤
300
μ
s, duty cycle
≤
2%.
b. Guaranteed by design, not subject to production testing.
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