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| 型号： | SI9130CG-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 11/15页 |
| 文件大小： | 0K |
| 描述： | IC CTRLR PWM PIN PROG 28SSOP |
| 标准包装： | 225 |
| 应用： | 控制器，移动式个人电脑 |
| 输入电压： | 5.5 V ~ 30 V |
| 输出数： | 2 |
| 输出电压： | 5V，可编程 |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 28-SSOP（0.209"，5.30mm 宽） |
| 供应商设备封装： | 28-SSOP |
| 包装： | 散装 |
Product is End of Life 3/2014
Si9130
Vishay Siliconix
cycle in continuous mode, or until the inductor current
becomes positive again, in discontinuous mode. In over-
current situations, where the inductor current is greater than
the 100 mV current-limit threshold, the high-side latch is
reset and the high-side gate drive is shut off.
During low-current load requirements, the inductor current
will not deliver the 25 mV minimum current threshold. The
Minimum Current comparator signals the PWM to enter
pulse-skipping mode when the threshold has not been
reached. pulse-skipping mode skips pulses to reduce
switching losses, the losses which decrease efficiency the
most at light load. Entering this mode causes the minimum
current comparator to reset the high-side latch at the
beginning of each oscillator cycle.
Soft-Start
To slowly bring up the 3.3 V and 5 V supplies, connect
capacitors from SS 3 and SS 5 to GND. Asserting ON 3 or ON 5
starts a 4 A constant current source to charge these
capacitors to 4 V. As the voltage on these pins ramps up, so
does the current limit comparator threshold, to increase the
duty cycle of the MOSFETs to their maximum level. If ON 3 or
ON 5 are left low, the respective capacitor is discharged to
GND. Leaving the SS 3 or SS 5 pins open will cause either
controller to reach the terminal over-current level within
10 μs.
Soft start helps prevent current spikes at turn-on and allows
separate supplies to be delayed using external
Synchronous rectification is always active when the Si9130
is powered-up, regardless of the operational mode.
Gate-Driver Boost
The high-side N-Channel drive is supplied by a flying-
capacitor boost circuit (see Figure 4). The capacitor takes a
charge from V L and then is connected from gate to source of
the high-side MOSFET to provide gate enhancement. At
power-up, the low-side MOSFET pulls LX_ down to GND
and charges the BST_ capacitor connected to 5 V. During
the second half of the oscillator cycle, the controller drives
the gate of the high-side MOSFET by internally connecting
node BST_ to DH_. This supplies a voltage 5 V higher than
the battery voltage to the gate of the high-side MOSFET.
Oscillations on the gates of the high-side MOSFET in
discontinuous mode are a natural occurrence caused by the
LC network formed by the inductor and stray capacitance at
the LX_ pins. The negative side of the BST_ capacitor is
connected to the LX_ node, so ringing at the inductor is
translated through to the gate drive.
BATTERY
INPUT
V L
programmability.
Synchronous Rectifiers
Synchronous rectification replaces the Schottky rectifier with
a MOSFET, which can be controlled to increase the
efficiency of the circuit.
When the high-side MOSFET is switched off, the inductor will
try to maintain its current flow, inverting the inductor’s
polarity. The path of current then becomes the circuit made
of the Schottky diode, inductor and load, which will charge
the output capacitor. The diode has a 0.5 V forward voltage
drop, which contributes a significant amount of power loss,
decreasing efficiency. A low-side switch is placed in parallel
with the Schottky diode and is turned on just after the diode
V L
PWM
Level
Translator
BST_
DH_
LX_
V L
DL_
begins to conduct. Because the r DS(ON) of the MOSFET is
low, the I*R voltage drop will not be as large as the diode,
which increases efficiency.
The low-side rectifier is shut off when the inductor current
drops to zero.
Shoot-through current is the result when both the high-side
and rectifying MOSFETs are turned on at the same time.
Break-before-make timing internal to the Si9130 manages
this potential problem. During the time when neither
MOSFET is on, the Schottky is conducting, so that the body
diode in the low-side MOSFET is not forced to conduct.
Document Number: 70190
S11-0975-Rev. G, 16-May-11
Figure 4. Boost Supply for Gate Drivers
www.vishay.com
11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SI9130CG-T1 | 功能描述:电流型 PWM 控制器 Pin-Programmable Dual Controller RoHS:否 制造商:Texas Instruments 开关频率:27 KHz 上升时间: 下降时间: 工作电源电压:6 V to 15 V 工作电源电流:1.5 mA 输出端数量:1 最大工作温度:+ 105 C 安装风格:SMD/SMT 封装 / 箱体:TSSOP-14 |
| SI9130CG-T1-E3 | 功能描述:IC CTRLR PWM PIN PROG 28SSOP RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - 专用型 系列:- 标准包装:2,000 系列:- 应用:控制器，DSP 输入电压:4.5 V ~ 25 V 输出数:2 输出电压:最低可调至 1.2V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:30-TFSOP（0.173"，4.40mm 宽） 供应商设备封装:30-TSSOP 包装:带卷 (TR) |
| SI9130DB | 功能描述:电流型 PWM 控制器 SI9130 Demo Board RoHS:否 制造商:Texas Instruments 开关频率:27 KHz 上升时间: 下降时间: 工作电源电压:6 V to 15 V 工作电源电流:1.5 mA 输出端数量:1 最大工作温度:+ 105 C 安装风格:SMD/SMT 封装 / 箱体:TSSOP-14 |
| SI9130LG | 功能描述:电流型 PWM 控制器 Prog Dual Controller RoHS:否 制造商:Texas Instruments 开关频率:27 KHz 上升时间: 下降时间: 工作电源电压:6 V to 15 V 工作电源电流:1.5 mA 输出端数量:1 最大工作温度:+ 105 C 安装风格:SMD/SMT 封装 / 箱体:TSSOP-14 |
| SI9130LG-E3 | 功能描述:电流型 PWM 控制器 Pin-Programmable Dual Controller RoHS:否 制造商:Texas Instruments 开关频率:27 KHz 上升时间: 下降时间: 工作电源电压:6 V to 15 V 工作电源电流:1.5 mA 输出端数量:1 最大工作温度:+ 105 C 安装风格:SMD/SMT 封装 / 箱体:TSSOP-14 |
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