参数资料
型号: SI9169BQ-T1-E3
厂商: Vishay Siliconix
文件页数: 8/10页
文件大小: 0K
描述: IC CONV BUCK BOOST 20TSSOP
标准包装: 3,000
应用: 转换器,1 芯锂离子便携式通信设备
输入电压: 2.7 V ~ 6 V
输出数: 1
输出电压: 可调至 1.3V
工作温度: -25°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 20-TSSOP(0.173",4.40mm 宽)
供应商设备封装: 20-TSSOP
包装: 带卷 (TR)
Si9169
Product is End of Life 3/2014
Vishay Siliconix
DETAIL OPERATIONAL DESCRIPTION (CONT’D)
Error Amplifier
The error amplifier gain-bandwidth product and slew rate is
critical parameters which determines the transient response
of converter. The transient response is function of both small
and large signal response. The small signal is the converter
closed loop bandwidth and phase margin while the large
signal is determined by the error amplifier dv/dt and the
inductor di/dt slew rate. Besides the inductance value, error
amplifier determines the converter response time. In order to
minimize the response time, the Si9169 is designed with 2
MHz error amplifier gain-bandwidth product to generate the
widest converter bandwidth and 3.5 V/μs slew rate for ultra-
fast large signal response.
Oscillator
The oscillator is designed to operate up to 2 MHz minimal.
The 2 MHz operating frequency allows the converter to
minimize the inductor and capacitor size, improving the
power density of the converter. Even with 2 MHz switching
frequency, quiescent current is only 500 μA with unique
power saving circuit design. The switching frequency is
easily programmed by attaching a resistor to R OSC pin. See
oscillator frequency versus R OSC curve to select the proper
values for desired operating frequency. The tolerance on the
Break-Before-Make Timing
A proper BBM time is essential in order to prevent shoot-
through current and maintain high efficiency. The break-
before-make time is set internally at 20 ns at V S = 3.6 V. The
high and low-side MOSFET drain voltages are monitored
and when the drain voltage reaches the 1.75 V below or
above its initial starting voltage, 20 ns BBM time is set before
the other switch turns on. The maximum controllable duty
cycle is limited by the BBM time. Since the BBM time is fixed,
maximum controllable duty cycle will vary depending on the
switching frequency.
Output MOSFET Stage
The high- and low-side switches are integrated to provide
optimum performance and to minimize the overall converter
size. Both, high and low-side switches are designed to
handle up to 1 A of continuous current. The MOSFET
switches were designed to minimize the gate charge loss as
well as the conduction loss. For the high frequency
operation, switching losses can exceed conduction loss, if
the switches are designed incorrectly. Under full load,
efficiency of 90 % is accomplished with 3.6 V battery voltage
in both buck and boost modes (+ 2.7 V output voltage for
buck mode and + 5 V output voltage for boost mode).
operating frequency is ± 20 % with 1 % tolerance resistor.
Synchronization
The synchronization to external clock is easily accomplished
by connecting the external clock into the SYNC pin. A logic
high to low transition synchronizes the clock. The external
clock frequency must be within 1.2 to 1.5 times the internal
clock frequency.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?70945 .
www.vishay.com
8
Document Number: 70945
S-72058-Rev. E, 08-Oct-07
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