参数资料
型号: SIDC06D60F6
厂商: INFINEON TECHNOLOGIES AG
元件分类: 整流器
英文描述: 15 A, 600 V, SILICON, RECTIFIER DIODE
封装: DIE-1
文件页数: 2/4页
文件大小: 109K
代理商: SIDC06D60F6
SIDC06D60F6
Edited by INFINEON Technologies, IMM PSD, L4344M, Edition 2.1, 09.03.2010
Maximum Ratings
Parameter
Symbol
Condition
Value
Unit
Repetitive peak reverse voltage
VRRM
Tvj = 25 °C
600
V
Continuous forward current
IF
Tvj < 150°C
1 )
Maximum repetitive forward current
IFRM
Tvj < 150°C
30
A
Junction temperature range
Tvj
-40...+175
°C
Operating junction temperature
Tvj
-40...+150
°C
Dynamic ruggedness
)
Pmax
IFmax = 30A, VRmax = 600V,
Tvj
≤ 150°C
tbd
kW
1 ) depending on thermal properties of assembly
2 ) not subject to production test - verified by design/characterisation
Static Characteristic (tested on wafer), Tvj = 25 °C
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
Reverse leakage current
IR
VR=600V
27
A
Cathode-Anode
breakdown Voltage
VBR
IR=1mA
600
V
Diode forward voltage
VF
IF=15A
1.6
V
Further Electrical Characteristics
Switching characteristics and thermal properties are depending strongly on module design and mounting
technology and can therefore not be specified for a bare die.
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