参数资料
型号: SIM-22ST
元件分类: 红外LED
英文描述: 1.5 mm, 1 ELEMENT, INFRARED LED, 950 nm
文件页数: 1/3页
文件大小: 136K
代理商: SIM-22ST
1/2
www.rohm.com
c
2010 ROHM Co., Ltd. All rights reserved.
2010.06 - Rev.B
Infrared light emitting diode, side-view type
SIM-22ST
The SIM-22ST is a GaAs infrared light emitting diode housed in side emission. High output with
1.5 lens.
Applications
Dimensions (Unit : mm)
Light source for sensors
Features
1) Compact package (4.7x4.6 mm) with lens.
2) High efficiency, high output.
3) Emission spectrum well suited to silicon detectors
(
P = 950 nm).
4) Good current-optical output linearity.
5) Long life, high reliability.
Absolute maximum ratings (Ta=25
C)
Parameter
Symbol
PD
IF
IFP
VR
Topr
Tstg
Limits
25 to +85
30 to +100
50
5
80
0.5
Unit
mA
V
mW
A
°C
Pulse width = 0.1ms, duty ratio 1%
Forward current
Reverse voltage
Power dissipation
Pulse forward current
Operating temperature
Storage temperature
Electrical and optical characteristics (Ta=25
C)
Parameter
Symbol
VF
IR
λP
Δλ
θ1/2
tr
tf
Min.
0.48
Typ.
0.8
1.3
950
40
±30
1.0
Max.
1.94
1.6
10
Unit
mW/sr
IF=10mA
IF
=10mA
IF
=50mA
VR
=5V
IF
=10mA
IF
=20mA
IF
=50mA
IF
=50mA
mA
V
μA
nm
deg
μs
fc
1.0
IF
=50mA
MHz
Conditions
Emitting strength
Forward voltage
Reverse current
Peak light emitting wavelength
Spectral line half width
Half-viewing angle
Response time
Cut-off frequency
IE
According to our measurement procedures.
4.1
4.6
± 0.1
(2.54)
0.64
1.0
1.9
2.54
±
0.1
1.8
±
0.05
2.8
4.7
±
0.1
1.0
1.5
12Min.
R0.75
R0.5
2
0.45
0.40
2
0.65
2-C0.7
1 Cathode
2 Anode
1
2
Gate
remainder
0.3Max.
0.15
Notes:
1. Tolerances are
± 0.2 unless
otherwise indicated.
2. Value in parenthese is size
at base of leads.
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