参数资料
| 型号： | SIP21107DT-18-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 13/19页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO 1.8V .15A TSOT23-5 |
| 标准包装： | 3,000 |
| 稳压器拓扑结构： | 正，固定式 |
| 输出电压： | 1.8V |
| 输入电压： | 2.2 V ~ 6 V |
| 稳压器数量： | 1 |
| 电流 - 输出： | 150mA |
| 电流 - 限制（最小）： | 170mA |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-5 细型，TSOT-23-5 |
| 供应商设备封装： | TSOT-23-5 |
| 包装： | 带卷 (TR) |
SiP21106, SiP21107, SiP21108
Vishay Siliconix
DETAILED DESCRIPTION
As shown in the block diagram, the circuit consists of a
V IN
bandgap reference, error amplifier, P-channel pass
transistor and an internal feedback resistor voltage divider,
1.2 V
Reference
+
Error-Amp
which is used to monitor and control the output voltage.
A constant 1.2 V bandgap reference voltage is applied to the
non-inverting input of the error amplifier. The error amplifier
compares this reference with the feedback voltage on its
inverting input and amplifies the difference. If the feedback
voltage is lower than the reference voltage, the
pass-transistor gate is pulled low. This increases the
PMOS's gate to source voltage and allows more current to
pass through the transistor to the output which increases the
-
R 1
R 2
V OUT
output voltage. Conversely, if the feedback voltage is higher
than the reference voltage, the pass transistor gate is pulled
high, decreasing the gate-to-source voltage, thereby
allowing less current to pass to the output and causing it to
drop.
Figure 4.
The SiP21108 has a user-adjustable output that can be set
through the resistor feedback network consisting of R 1 and
R 2 . R 2 range of 100K to 400K is recommended to be
consistent with ground current specification. R 1 can then be
determined by the following equation:
Internal P-Channel Pass Transistor
R 1 = R 2 x (
- 1 )
A 0.9 Ω (typical) P-channel MOSFET is used as the pass
transistor for the SiP21106, SiP21107, SiP21108 part series.
The MOSFET transistor offers many advantages over the
more, formerly, common PNP pass transistor designs, which
ultimately result in longer battery lifetime. The main
disadvantage of PNP pass transistors is that they require a
certain base current to stay on, which significantly increases
under heavy load conditions. In addition, during dropout,
when the pass transistor saturates, the PNP regulators
waste considerable current. In contrast, P-channel
MOSFETS require virtually zero-base drive and do not suffer
from the stated problems. These savings in base drive
current translate to lower quiescent current which is typical
around 35 μA as shown in the Typical Characteristics.
Shutdown and Auto-Dischage/No-Discharge
Bringing the EN voltage low will place the part in shutdown
mode where the device output enters a high-impedance
state and the quiescent current is reduced to below 1 μA,
reducing the drain on the battery in standby mode and
increasing standby time. Connect EN pin to input for normal
operation. The output has an internal pull down to discharge
the output to ground when the EN pin is low. The internal pull
down is a 100 Ω typical resistor, which can discharge a 1 μF
in less than 1 ms. Refer to Typical Operating Waveforms for
turn-off waveforms.
Output Voltage Selection
The SiP21106 has fixed voltage outputs that are preset to
voltages from 1.2 V to 4.6 V (see Ordering Information).
Document Number: 74442
S09-1047-Rev. G, 08-Jun-09
V OUT
V ref
Where V ref is typically 1.2005 V. Use 1 % or better resistors
for better output voltage accuracy (see Figure 4).
Current Limit
The SiP21106, SiP21107, SiP21108 include a current limit
block which monitors the current passing through the pass
transistor through a current mirror and controls the gate
voltage of the MOSFET, limiting the output current to 330 mA
(typical). This current limit feature allows for the output to be
shorted to ground for an indefinite amount of time without
damaging the device.
Thermal-Overload Protection
The thermal overload protection limits the total power
dissipation and protects the device from being damaged.
When the junction temperature exceeds T J = 150 °C, the
device turns the P-channel pass transistor off allowing the
device to cool down. Once the temperature drops by about
20 °C, the thermal sensor turns the pass transistor on again
and resumes normal operation. Consequently, a continuous
thermal overload condition will result in a pulsed output. It is
generally recommended to not exceed the junction
temperature rating of 125 °C for continuous operation.
Noise Reduction in SiP21106
For the SiP21106, an external 10 nF bypass capacitor at BP
pin is used to create a low pass filter for noise reduction. The
startup time is fast, since a power-on circuit pre-charges the
bypass capacitor. After the power-up sequence the
pre-charge circuit is switched to standby mode in order to
save current. It is therefore not recommended to use larger
bypass capacitor values than 50 nF. When the circuit is used
without a capacitor, stable operation is guaranteed.
www.vishay.com
13
相关PDF资料 |
PDF描述 |
|---|---|
| SIP21107DT-12-E3 | IC REG LDO 1.2V .15A TSOT23-5 |
| MAX734CSA+ | IC PROG SUPP FLASH MEM 12V 8SOIC |
| ECM40DTMT-S189 | CONN EDGECARD 80POS R/A .156 SLD |
| RYM43DTBN | CONN EDGECARD 86POS R/A .156 SLD |
| X40430S14I-BT1 | IC VOLT MON TRPL EEPROM 14-SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SIP21107DT-25-E3 | 功能描述:低压差稳压器 - LDO Low Noise 150mA 2.5V RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| SIP21107DT-26-E3 | 功能描述:低压差稳压器 - LDO Low Noise 150mA 2.6V RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| SIP21107DT-285-E3 | 功能描述:低压差稳压器 - LDO Lo Noise 150mA 2.85V RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| SIP21107DT-28-E3 | 功能描述:低压差稳压器 - LDO Low Noise 150mA 2.8V RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| SIP21107DT-30-E3 | 功能描述:低压差稳压器 - LDO Low Noise 150mA 3.0V RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
发布紧急采购，3分钟左右您将得到回复。