参数资料
型号: SIP21107DT-18-E3
厂商: Vishay Siliconix
文件页数: 2/19页
文件大小: 0K
描述: IC REG LDO 1.8V .15A TSOT23-5
标准包装: 3,000
稳压器拓扑结构: 正,固定式
输出电压: 1.8V
输入电压: 2.2 V ~ 6 V
稳压器数量: 1
电流 - 输出: 150mA
电流 - 限制(最小): 170mA
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: SOT-23-5 细型,TSOT-23-5
供应商设备封装: TSOT-23-5
包装: 带卷 (TR)
SiP21106, SiP21107, SiP21108
Vishay Siliconix
TYPICAL APPLICATION CIRCUIT
1
V IN
V OUT
5
V OUT
EN
EN
POK
POK
C IN = 1 μF
C OUT = 1 μF
2
GND
SiP21107
GND
SiP21107
NC
3
EN
POK
4
POK
V IN
V IN
V OUT
V OUT
TSOT23-5L/SC70-5LPackage
C IN = 1 μF
TSC75L-6 Package
C OUT =1 μF
V I N
1
V I N
V OUT
5
V OUT
E N
E N
Adj
C I N = 1 μ F
2
G N D
C OUT = 1 μ F
G N D
N C
SiP2110 8
SiP2110 8
E N
3
E N
A d j
4
V I N
V I N
V OUT
V OUT
TSOT23-5L/SC70-5L Package
ABSOLUTE MAXIMUM RATINGS
C I N = 1 μ F
TSC75-6L Package
C OUT = 1 μ F
Parameter
Input Voltage, V IN to GND
V EN (See Detailed Description)
Output Current (I OUT )
Output Voltage (V OUT )
TSC75-6L
Limit
- 0.3 to 6.5
- 0.3 to 6.5
Short Circuit Protected
- 0.3 to V IN + 0.3
TSOT23-5L
SC70-5L
Unit
V
V
Package Thermal Resistance ( θ JA )
Package Power Dissipation (P D ) a
b
420
131
305
180
187
294
mW
°C/W
Maximum Junction Temperature, T J(max)
125
Storage Temperature, T STG
- 65 to 150
°C
Lead Temperature, T L
c
260
Notes:
a. Derate 7.6 mW/°C for TSC75-6L package, 5.5 mW/°C for TSOT23-5L and 3.4 mW/°C for SC70-5L package above T A = 70 °C.
b. Device mounted with all leads soldered or welded to multilayer 1S2P PC board.
c. Soldering for 5 s.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating/conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING RANGE
Parameter
Input Voltage, V IN
Operating Ambient Temperature T A
www.vishay.com
2
Limit
2.2 to 6
- 40 to 85
Unit
V
°C
Document Number: 74442
S09-1047-Rev. G, 08-Jun-09
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