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| 型号： | SIR474DP-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH D-S 30V PPAK 8SOIC |
| 标准包装： | 3,000 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 20A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 9.5 毫欧 @ 10A，10V |
| Id 时的 Vgs(th)（最大）： | 2.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 27nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 985pF @ 15V |
| 功率 - 最大： | 29.8W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? SO-8 |
| 供应商设备封装： | PowerPAK? SO-8 |
| 包装： | 带卷 (TR) |
SiR474DP
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
30
R DS(on) ( Ω )
0.0095 at V GS = 10 V
0.012 at V GS = 4.5 V
PowerPAK SO-8
I D (A) a, g
20
20
Q g (Typ.)
8 nC
? Halogen-free
? TrenchFET ? Power MOSFET
? Low Thermal Resistance PowerPAK ?
Package with Low 1.07 mm Profile
? Optimized for High-Side Synchronous
Operation
Rectifier
? 100 % R g Tested
8
6.15 mm
D
D
1
S
2
S
3
S
5.15 mm
G
4
? 100 % UIS Tested
APPLICATIONS
? Notebook CPU Core
- High-Side Sw itch
G
D
7
6
D
5
D
Bottom View
Ordering Information: SiR474DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
S
N-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
30
± 20
20 g
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
20 g
15 b, c
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = 0.1 mH
I DM
I S
I AS
E AS
12 b, c
50
20 g
3.2 b, c
20
20
A
mJ
T C = 25 °C
29.8
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
19.0
3.9 b, c
W
T A = 70 °C
2.5 b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient b, f
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
R thJA
R thJC
27
3.5
32
4.2
°C/W
Notes:
a. Base on T C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile ( h ttp://www.vishay.com/ppg?73257 ). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 70 °C/W.
g. Packaged Limited.
Document Number: 68996
S-82749-Rev. A, 10-Nov-08
www.vishay.com
1
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