- 您现在的位置：买卖IC网 > Datasheet目录516 > SIRA04DP-T1-GE3 (Vishay Siliconix)MOSFET N-CHAN 30V(D-S)POWERPAK Datasheet资料下载
参数资料
| 型号： | SIRA04DP-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CHAN 30V(D-S)POWERPAK |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 40A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2.15 毫欧 @ 15A，10V |
| Id 时的 Vgs(th)（最大）： | 2.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 77nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3595pF @ 15V |
| 功率 - 最大： | 27.7W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? SO-8 |
| 供应商设备封装： | PowerPAK? SO-8 |
| 包装： | 标准包装 |
| 其它名称： | SIRA04DP-T1-GE3DKR |
New Product
SiRA04DP
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
V DS (V) R DS(on) ( ? ) (Max.)
I D (A) a, g
Q g (Typ.)
FEATURES
? TrenchFET ? Gen IV Power MOSFET
? 100 % R g and UIS Tested
30
0.00215 at V GS = 10 V
0.00310 at V GS = 4.5 V
40
40
22.5 nC
? Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
PowerPAK ? SO-8
APPLICATIONS
? Synchronous Rectification
? High Power Density DC/DC
D
6.15 mm
1
S
S
5.15 mm
? VRMs and Embedded DC/DC
2
S
8
D
D
3
4
G
G
7
6
D
5
D
Bottom View
S
N-Channel MOSFET
Ordering Information:
SiRA04DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
30
+ 20, - 16
40 g
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
40 g
35.9 b, c
Pulsed Drain Current (t = 300 μs)
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = ? 0.1 mH
I DM
I S
I AS
E AS
28.7 b, c
80
40 g
4.5 b, c
20
20
A
mJ
T C = 25 °C
62.5
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
40
5 b, c
W
T A = 70 °C
3.2 b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient b, f
Maximum Junction-to-Case (Drain)
t ? 10 s
Steady State
R thJA
R thJC
20
1.6
25
2
°C/W
Notes:
a. Based on T C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile ( www.vishay.com/doc?73257 ). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 70 °C/W.
g. Package limited.
Document Number: 63725
S12-2118-Rev. B, 03-Sep-12
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
相关PDF资料 |
PDF描述 |
|---|---|
| SIRA10DP-T1-GE3 | MOSFET N-CH 30V 30A SO-8 |
| SIS412DN-T1-GE3 | MOSFET N-CH D-S 30V 1212-8 PPAK |
| SIS426DN-T1-GE3 | MOSFET N-CH 20V 35A 1212-8 |
| SIS436DN-T1-GE3 | MOSFET N-CH D-S 25V PPAK 1212-8 |
| SIS452DN-T1-GE3 | MOSFET N-CH D-S 12V 1212-8 PPAK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SIRA06DP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30 V (D-S) MOSFET |
| SIRA06DP-T1-GE3 | 功能描述:MOSFET 30V 2.5mOhm@10V 40A N-Ch G-IV RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SIRA10DP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30 V (D-S) MOSFET |
| SIRA10DP-T1-GE3 | 功能描述:MOSFET 30V 3.7mOhm@10V 30A N-Ch G-IV RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SIRA12DP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30 V (D-S) MOSFET |
发布紧急采购，3分钟左右您将得到回复。