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| 型号： | SIS412DN-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/13页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH D-S 30V 1212-8 PPAK |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 12A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 24 毫欧 @ 7.8A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 12nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 435pF @ 15V |
| 功率 - 最大： | 15.6W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? 1212-8 |
| 供应商设备封装： | PowerPAK? 1212-8 |
| 包装： | 标准包装 |
| 其它名称： | SIS412DN-T1-GE3DKR |
New Product
SiS412DN
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
30
R DS(on) ( Ω )
0.024 at V GS = 10 V
0.030 at V GS = 4.5 V
I D (A) a
12
12
Q g (Typ.)
3.8 nC
? Halogen-free According to IEC 61249-2-21
? TrenchFET ? Power MOSFET
? 100 % R g Tested
PowerPAK 1212-8
APPLICATIONS
? Notebook PC
- System Power
3.30 mm
1
S
S
3.30 mm
- Load Switch
D
2
3
S
G
4
D
8
7
D
6
D
5
D
G
Bottom V ie w
Orderin g Information: SiS412D N -T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
S
N -Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
30
± 20
12 a
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
12 a
8.7 b, c
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = 0.1 mH
I DM
I S
I AS
E AS
7 b, c
30
12 a
2.7 b, c
5
1.25
A
mJ
T C = 25 °C
15.6
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
10
3.2 b, c
W
T A = 70 °C
2 b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) e, f
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient b, d
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
R thJA
R thJC
32
6.5
39
8
°C/W
Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 81 °C/W.
e. See Solder Profile ( www.vishay.com/ppg?73257 ). The PowerPAK 1212 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
f. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 69006
S09-0135-Rev. C, 02-Feb-09
www.vishay.com
1
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| SIS415DNT-T1-GE3 | 功能描述:MOSFET 20V .004ohm@10V 35A P-Ch G-III RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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