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| 型号： | SIS468DN-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/13页 |
| 文件大小： | 0K |
| 描述： | MOSF N CH 80V 30A 1212-8 PWR PK |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 80V |
| 电流 - 连续漏极(Id) @ 25° C： | 30A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 19.5 毫欧 @ 10A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 28nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 780pF @ 40V |
| 功率 - 最大： | 52W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? 1212-8 |
| 供应商设备封装： | PowerPAK? 1212-8 |
| 包装： | 标准包装 |
| 其它名称： | SIS468DN-T1-GE3DKR |
SiS468DN
Vishay Siliconix
N-Channel 80 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
V DS (V) R DS(on) ( ? ) (Max.)
0.0195 at V GS = 10 V
I D (A) f
30 g
Q g (Typ.)
?
?
?
TrenchFET ? Power MOSFET
100 % R g and UIS Tested
Capable of Operating with 5 V Gate Drive
80
0.0210 at V GS = 7.5 V
30 g
8.7 nC
?
Material categorization:
0.0320 at V GS = 4.5 V
28.5
For definitions of compliance please see
www.vishay.com/doc?99912
PowerPAK ? 1212- 8
APPLICATIONS
? Telecom Bricks
D
3.30 mm
1
S
2
S
S
3.30 mm
? Primary side switch
? Synchronous Rectification
3
4
G
8
D
7
D
D
G
6
5
D
Bottom V ie w
S
N-Channel MOSFET
Orderin g Information:
SiS46 8 D N -T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
80
± 20
30 g
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
29.2
9.8 a, b
Pulsed Drain Current (t = 300 μs)
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = 0.1 mH
I DM
I S
I AS
E AS
7.8 a, b
60
30 g
3.1 a, b
10
5
A
mJ
T C = 25 °C
52
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
33.3
3.7 a, b
W
T A = 70 °C
2.4 a, b
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) c, d
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
a, e
Maximum Junction-to-Case (Drain)
t ? 10 s
Steady State
R thJA
R thJC
26
1.9
33
2.4
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See solder profile ( www.vishay.com/doc?73257 ). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under steady state conditions is 81 °C/W.
f. Based on T C = 25 °C.
g. Package limited.
Document Number: 63750
S12-0542-Rev. A, 12-Mar-12
For technical support, please contact: pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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