- 您现在的位置：买卖IC网 > Datasheet目录516 > SIS902DN-T1-GE3 (Vishay Siliconix)MOSFET N-CH D-S 75V 1212-8 PPAK Datasheet资料下载
参数资料
| 型号： | SIS902DN-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH D-S 75V 1212-8 PPAK |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 75V |
| 电流 - 连续漏极(Id) @ 25° C： | 4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 186 毫欧 @ 3A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 175pF @ 38V |
| 功率 - 最大： | 15.4W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? 1212-8 双 |
| 供应商设备封装： | PowerPAK? 1212-8 Dual |
| 包装： | 标准包装 |
| 其它名称： | SIS902DN-T1-GE3DKR |
SiS902DN
Vishay Siliconix
Dual N-Channel 75-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
75
R DS(on) ( Ω )
0.186 at V GS = 10 V
0.228 at V GS = 4.5 V
I D (A)
4 e
4 e
Q g (Typ.)
2.1 nC
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET ? Power MOSFET
? Low Thermal Resistance PowerPAK ?
Package with Small Size and Low 1.07 mm
Profile
? 100 % R g Tested
? 100 % UIS Tested
? Compliant to RoHS Directive 2002/95/EC
PowerPAK 1212-8
APPLICATIONS
? POL
D 1
D 2
3.30 mm
1
S1
G1
3.30 mm
2
3
S2
G2
8
D1
D1
4
G 1
G 2
7
6
D2
5
D2
Bottom View
S 1
S 2
Ordering Information: SiS902DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
75
± 20
4 e
Unit
V
Continuous Drain Current (T J = 150 °C)
Pulsed Drain Current
Avalanche Current
Single-Pulse Avalanche Energy
T C = 70 °C
T A = 25 °C
T A = 70 °C
L = 0.1 mH
I D
I DM
I AS
E AS
4 e
3 a, b
2.4 a, b
8
2
0.2
A
mJ
T C = 25 °C
15.4
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
9.9
3.1 a, b
W
T A = 70 °C
2 a, b
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) c, d
T J , T stg
- 55 to 150
260
°C
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See Solder Profile ( www.vishay.com/ppg?73257 ). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
Document Number: 64804
S09-0661-Rev. A, 20-Apr-09
www.vishay.com
1
相关PDF资料 |
PDF描述 |
|---|---|
| SISA10DN-T1-GE3 | MOSFET N-CH 30V 30A 1212-8 |
| SIZ700DT-T1-GE3 | MOSFET N-CH D-S 20V PPAK 1212-8 |
| SIZ710DT-T1-GE3 | MOSFET N-CH D-S 20V POWERPAIR |
| SIZ720DT-T1-GE3 | MOSFET N-CH D-S 20V POWERPAIR |
| SIZ902DT-T1-GE3 | MOSFET N-CH 30V DUAL D-S |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SISA04DN | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30 V (D-S) MOSFET |
| SISA04DN-T1-GE3 | 功能描述:MOSFET 30V 2.15mOhm@10V 40A N-Ch G-IV RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SISA10DN | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30 V (D-S) MOSFET |
| SISA10DN-T1-GE3 | 功能描述:MOSFET 30V 3.7mOhm@10V 30A N-Ch G-IV RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SISA12ADN-T1-GE3 | 功能描述:MOSFET 30V 4.3mOhm@10V 25A N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。