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参数资料
| 型号： | SIS902DN-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 8/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH D-S 75V 1212-8 PPAK |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 75V |
| 电流 - 连续漏极(Id) @ 25° C： | 4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 186 毫欧 @ 3A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 175pF @ 38V |
| 功率 - 最大： | 15.4W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? 1212-8 双 |
| 供应商设备封装： | PowerPAK? 1212-8 Dual |
| 包装： | 标准包装 |
| 其它名称： | SIS902DN-T1-GE3DKR |
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All product specifications and data are subject to change without notice.
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Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
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相关PDF资料 |
PDF描述 |
|---|---|
| SISA10DN-T1-GE3 | MOSFET N-CH 30V 30A 1212-8 |
| SIZ700DT-T1-GE3 | MOSFET N-CH D-S 20V PPAK 1212-8 |
| SIZ710DT-T1-GE3 | MOSFET N-CH D-S 20V POWERPAIR |
| SIZ720DT-T1-GE3 | MOSFET N-CH D-S 20V POWERPAIR |
| SIZ902DT-T1-GE3 | MOSFET N-CH 30V DUAL D-S |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SISA04DN | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30 V (D-S) MOSFET |
| SISA04DN-T1-GE3 | 功能描述:MOSFET 30V 2.15mOhm@10V 40A N-Ch G-IV RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SISA10DN | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30 V (D-S) MOSFET |
| SISA10DN-T1-GE3 | 功能描述:MOSFET 30V 3.7mOhm@10V 30A N-Ch G-IV RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SISA12ADN-T1-GE3 | 功能描述:MOSFET 30V 4.3mOhm@10V 25A N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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