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参数资料
| 型号： | SIZ720DT-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/14页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH D-S 20V POWERPAIR |
| 标准包装： | 3,000 |
| 系列： | TrenchFET® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 16A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 8.7 毫欧 @ 16.8A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 23nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 825pF @ 10V |
| 功率 - 最大： | 27W，48W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-PowerPair? |
| 供应商设备封装： | 6-PowerPair? |
| 包装： | 带卷 (TR) |
SiZ720DT
Vishay Siliconix
N-Channel 20-V (D-S) MOSFETs
FEATURES
PRODUCT SUMMARY
? Halogen-free According to IEC 61249-2-21
Channel-1
Channel-2
V DS (V)
20
20
R DS(on) ( ? )
0.0087 at V GS = 10 V
0.0115 at V GS = 4.5 V
0.0062 at V GS = 10 V
0.0080 at V GS = 4.5 V
I D (A)
16 a
16 a
16 a
16 a
Q g (Typ.)
7.3 nC
21 nC
Definition
? TrenchFET ? Power MOSFETs
? 100 % R g and UIS Tested
? Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
? Notebook System Power
? POL
PowerPAIR ? 6 x 3.7
? Low Current DC/DC
D 1
Pin 1
1
G 1
D 1
3.73 mm
G 2
S 1 /D 2
D 1
2
3
D 1
G 1
N-Channel 1
MOSFET
S 1 /D 2
6
S 2
5
S 2
(Pin 7)
6 mm
G 2
4
N-Channel 2
Orderin g Information:
SiZ720DT-T1-GE3 (Lead (P b )-free and Halogen-free)
MOSFET
S 2
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
Channel-1
20
± 20
Channel-2
Unit
V
T C = 25 °C
16 a
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
16 a
16 a, b, c
Pulsed Drain Current
Source Drain Current Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = 0.1 mH
I DM
I S
I AS
E AS
70
16 a
3.2 b, c
18
16
16 a, b, c
70
16 a
3.8 b, c
20
20
A
mJ
T C = 25 °C
27
48
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
17
3.9 b, c
31
4.6 b, c
W
T A = 70 °C
2.5 b, c
3 b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Channel-1
Channel-2
Parameter
Symbol
Typ.
Max.
Typ.
Max.
Unit
Maximum Junction-to-Ambient b, f t ? 10 s
Maximum Junction-to-Case (Drain) Steady State
R thJA
R thJC
24 32 20 27
3.5 4.6 2 2.6
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile ( www.vishay.com/doc?73257 ). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 67 °C/W for channel-1 and 65 °C/W for channel-2.
Document Number: 65579
S11-2379-Rev. B, 28-Nov-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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