- 您现在的位置：买卖IC网 > Datasheet目录516 > SIZ902DT-T1-GE3 (Vishay Siliconix)MOSFET N-CH 30V DUAL D-S Datasheet资料下载
参数资料
| 型号： | SIZ902DT-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/14页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V DUAL D-S |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 16A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 12 毫欧 @ 13.8A，10V |
| Id 时的 Vgs(th)（最大）： | 2.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 21nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 790pF @ 15V |
| 功率 - 最大： | 29W，66W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PowerWDFN |
| 供应商设备封装： | 8-PowerPair? |
| 包装： | 标准包装 |
| 其它名称： | SIZ902DT-T1-GE3DKR |
New Product
SiZ902DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFETs
FEATURES
PRODUCT SUMMARY
? Halogen-free According to IEC 61249-2-21
16
Channel-1
Channel-2
V DS (V)
30
30
R DS(on) ( ? ) (Max.)
0.0120 at V GS = 10 V
0.0145 at V GS = 4.5 V
0.0064 at V GS = 10 V
0.0083 at V GS = 4.5 V
I D (A)
16 a
16 a
16 a
a
Q g (Typ.)
6.8 nC
21 nC
Definition
? TrenchFET ? Power MOSFETs
? 100 % R g and UIS Tested
? Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
? Notebook System Power
? POL
? Synchronous Buck Converter
PowerPAIR ? 6 x 5
D 1
Pin 1
1
G 1
2
D 1
5 mm
D 1
G 1
G 2
S 1 /D 2
D 1
3
4
D 1
N-Channel 1
MOSFET
S 1 /D 2
8
7
S 2
Pin 9
6
6 mm
G 2
5
N-Channel 2
Orderin g Information: SiZ902DT-T1-GE3 (Lead (P b )-free and Halogen-free)
MOSFET
S 2
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwis e noted)
Parameter
Symbol
Channel-1
Channel-2
Unit
16
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
V DS
V GS
16
a
30
± 20
a
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
16 a
14.3 b, c
16 a
16 a, b, c
Pulsed Drain Current (t = 300 μs)
Continuous Source Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = 0.1 mH
I DM
I S
I AS
E AS
11.4 b, c
50
16 a
3.4 b, c
18
16
16 a, b, c
80
16 a
4.1 b, c
30
45
A
mJ
T C = 25 °C
29
66
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
18
4.2 b, c
42
5 b, c
W
T A = 70 °C
2.7 b, c
3.2 b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Channel-1
Channel-2
Parameter
Maximum Junction-to-Ambient b, f t ? 10 s
Maximum Junction-to-Case (Drain) Steady State
Symbol
R thJA
R thJC
Typ.
24
3.4
Max.
30
4.3
Typ.
20
1.5
Max.
25
1.9
Unit
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile ( www.vishay.com/doc?73257 ). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 65 °C/W for channel-1 and 57 °C/W for channel-2.
Document Number: 63465
S11-2380 Rev. B, 28-Nov-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
相关PDF资料 |
PDF描述 |
|---|---|
| SKY12322-86LF-EVB | BOARD EVALUATION FOR SKY12322-86 |
| SKY12323-303LF-EVB | BOARD EVALUATION FOR SKY1232-303 |
| SKY12324-73LF-EVB | BOARD EVALUATION FOR SKY12324-73 |
| SKY12325-350LF-EVB | BOARD EVAL FOR SKY12325-350 |
| SKY12328-350LF-EVB | BOARD EVAL FOR SKY12328-350 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SIZ904DT | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 30 V (D-S) MOSFETs |
| SIZ904DT-T1-GE3 | 功能描述:MOSFET 30V 12/16A 20/33W 24/13.5mOhms @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SIZ910DT | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 30 V (D-S) MOSFETs |
| SIZ910DT-T1-GE3 | 功能描述:MOSFET 30V 40A / 40A Dual N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SIZ916DT | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 30 V (D-S) MOSFETs |
发布紧急采购，3分钟左右您将得到回复。