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参数资料
| 型号： | SL12HE3 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 1.5 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AC |
| 封装： | LEAD FREE, PLASTIC, SMA, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 199K |
| 代理商： | SL12HE3 |
SL12 & SL13
Document Number 88740
15-Jul-05
Vishay General Semiconductor
www.vishay.com
1
DO-214AC (SMA)
Low VF Surface Mount Schottky Rectifier
Major Ratings and Characteristics
IF(AV)
1.5 A
VRRM
20 V, 30 V
IFSM
50 A
VF
0.34 V
Tj max.
125 °C
Features
Low profile package
Ideal for automated placement
Guardring for overvoltage protection
Low power losses, high efficiency
Very low forward voltage drop
High surge capability
Meets MSL level 1, per J-STD-020C
Solder Dip 260 °C, 40 seconds
Typical Applications
For use in low voltage, high frequency inverters, free-
wheeling, dc-to-dc converters, and polarity protection
applications
Mechanical Data
Case: DO-214AC (SMA)
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes the cathode end
Maximum Ratings
TA = 25 °C unless otherwise specified
Parameter
Symbol
SL12
SL13
Unit
Device marking code
SL2
SL3
Maximum repetitive peak reverse voltage
VRRM
20
30
V
Maximum RMS voltage
VRMS
14
21
V
Maximum DC blocking voltage
VDC
20
30
V
Maximum average forward rectified current
at TL = 105 °C (Fig.1)
IF(AV)
15
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
50
A
Voltage rate of change (rated VR)
dv/dt
10000
V/s
Operating junction temperature range
TJ
- 55 to + 125
°C
Storage temperature range
TSTG
- 55 to + 150
°C
相关PDF资料 |
PDF描述 |
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| SL12/11T | 1.5 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AC |
| SL23 | 2 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AA |
| SL22-E3 | 2 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AA |
| SL23/55T | 2 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AA |
| SL22/52T | 2 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SL12HE3/5AT | 功能描述:肖特基二极管与整流器 20 Volt 1.0 Amp 50 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SL12HE3/61T | 功能描述:肖特基二极管与整流器 20 Volt 1.0 Amp 50 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SL12-L | 制造商:FORMOSA 制造商全称:Formosa MS 功能描述:Low VF Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| SL12-M | 制造商:FORMOSA 制造商全称:Formosa MS 功能描述:Silicon epitaxial planer type |
| SL12-MH | 制造商:FORMOSA 制造商全称:Formosa MS 功能描述:Low VF Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
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