参数资料
型号: SL12T3G
厂商: ON SEMICONDUCTOR
元件分类: TVS二极管 - 瞬态电压抑制
英文描述: 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, TO-236
封装: LEAD FREE, PLASTIC, CASE 318-08, 3 PIN
文件页数: 2/5页
文件大小: 132K
代理商: SL12T3G
SL05T1 Series
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation @ 8x20 usec (Note 1)
@ TL ≤ 25°C
Ppk
300
W
IEC 6100042
Level 4
Contact Discharge
Air Discharge
IEC 6100044
EFT
IEC 6100045
Lightning
Vpp
±8
±16
40
12
kV
A
Total Power Dissipation on FR5 Board (Note 2) @ TA = 25°C
Derate above 25°C
°PD°
225
1.8
°mW°
mW/°C
Thermal Resistance Junction to Ambient
RqJA
556
°C/W
Total Power Dissipation on Alumina Substrate (Note 3) @ TA = 25°C
Derate above 25°C
°PD°
300
2.4
°mW
mW/°C
Thermal Resistance JunctiontoAmbient
RqJA
417
°C/W
Junction and Storage Temperature Range
TJ, Tstg
55 to +150
°C
Lead Solder Temperature Maximum (10 Second Duration)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Nonrepetitive current pulse per Figure 2
2. FR5 = 1.0 x 0.75 x 0.62 in.
3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
UNIDIRECTIONAL
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
Working Peak Reverse Voltage
IR
Maximum Reverse Leakage Current @ VRWM
VBR
Breakdown Voltage @ IT
IT
Test Current
QVBR
Maximum Temperature Coefficient of VBR
IF
Forward Current
VF
Forward Voltage @ IF
ZZT
Maximum Zener Impedance @ IZT
IZK
Reverse Current
ZZK
Maximum Zener Impedance @ IZK
UniDirectional TVS
IPP
IF
V
I
IR
IT
VRWM
VC VBR
VF
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