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参数资料
| 型号： | SLD-68E1B |
| 元件分类： | 光敏二极管 |
| 英文描述： | PHOTO DIODE |
| 封装： | TO-46, 2 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 33K |
| 代理商： | SLD-68E1B |
5200 St. Patrick St., Montreal
The Old Railway, Princes Street
Que., H4E 4N9, Canada
Ulverston, Cumbria, LA12 7NQ, UK
Tel: 514-768-8000
Tel: 01 229 581 551
Fax: 514-768-8889
Fax: 01 229 581 554
QF-84
SLD-68E1
Planar Photodiode
Features
Planar photodiode
Low capacitance
Fast switching time
Low leakage current
Linear response vs irradiance
TO-46 base with epoxy dome lens
Multiple dark current ranges available
Description
This
planar,
passivated
silicon
photodetector
is
designed to operate in either photovoltaic or reverse
bias mode to provide low capacitance with fast
switching speed.
It provides excellent linearity in
output signal versus light intensity. Low dark current
and low capacitance make it the ideal detector for fast
rise time applications.
Absolute Maximum Ratings
Storage Temperature
-20
°C to +75°C
Operating Temperature
-20
°C to +75°C
Soldering Temperature (3)
260
°C
Notes: (1) Ee = light source @ 2854
°K
(2) Ee = light source @
λ = 880 nm
(3) >2 mm from case for <5 sec.
Anode +
Cathode -
(common to case)
45°
25 min.
4.22
2.54
0.41 - 0.48
2.8 max.
Chip Size = 1.7 mm X 1.7 mm
Active Area = 2.0 sq.mm.
Dimensions in mm. Tolerance: +/-0.13
5.33
100°
90°
80°
70°
60°
50°
1.0
40°
30°
20°
10°
Half Angle = 40°
Directional Sensitivity Characteristics
20°
40°
60°
80°
100° 120°
0.0
0.2
0.4
0.6
0.8
0.4
0.6
0.8
1.0
Electrical Characteristics (TA=25
°C unless otherwise noted)
Symbol
Parameter
MIN
TYP
MAX
UNITS
TEST CONDITIONS
ISC
Short Circuit Current
150
225
A
VR=0V, Ee=25mW/cm
2 (1)
VOC
Open Circuit Voltage
0.40
V
Ee=25mw/cm
2
(1)
ID
Reverse Dark Current:
SLD-68E1A
100
nA
VR=100mV, Ee=0
SLD-68E1B
100
nA
VR=5V, Ee=0
SLD-68E1C
10
nA
VR=5V, Ee=0
SLD-68E1D
1
nA
VR=5V, Ee=0
SLD-68E1E
250
pA
VR=5V, Ee=0
CJ
Junction Capacitance
40
pF
VR=0, Ee=0, f=1MHz
tR
Rise Time
1.0
s
VR=10V, RL=1k
(2)
tF
Fall Time
1.5
s
VR=10V, RL=1k
(2)
TCI
Temp. Coef., ISC
+0.2
%/
°C (1)
VBR
Reverse Breakdown Voltage
50
V
IR=100
A
λ
P
Maximum Sensitivity Wavelength
930
nm
λ
R
Sensitivity Spectral Range
400
1100
nm
θ
1/2
Acceptance Half Angle
40
deg
(off center-line)
Specifications subject to change without notice.
103189 REV 0
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