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参数资料
| 型号： | SLD322XT |
| 元件分类： | 激光器 |
| 英文描述： | 790 nm, LASER DIODE |
| 封装： | M-273(LO-10), 8 PIN |
| 文件页数： | 3/8页 |
| 文件大小： | 83K |
| 代理商： | SLD322XT |
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SLD322XT
Example of Representative Characteristics
Optical power output vs. Forward current characteristics
IF – Forward current [mA]
0
200
400
600
800
1000
200
400
600
800
1000
Po
–
Optical
power
output
[mW]
Tth = –10
°C
Tth = 0
°C
Tth = 25
°C
Tth = 30
°C
Optical power output vs. Monitor current characteristics
Imon – Monitor current [mA]
0
0.5
1.0
0
250
500
Po
–
Optical
power
output
[mW]
Tth = –10
°C
Tth = 0
°C
Tth = 25
°C
Tth = 30
°C
Threshold current vs. Temperature characteristics
Tth – Thermistor temperature [
°C]
–10
0
102030
100
500
1000
Ith
–
Threshold
current
[mA]
Temperature dependence of far field pattern
(Parallel to junction)
Angle [degree]
–90
–60
–30
0
30
60
90
Radiation
intensity
(optional
scale)
PO = 500mW
Tth = –5
°C
Tth = 10
°C
Tth = 25
°C
Power dependence of far field pattern
(Parallel to junction)
Angle [degree]
–90
–60
–30
0
30
60
90
Radiation
intensity
(optional
scale)
Tth = 25
°C
PO = 500mW
PO = 400mW
PO = 300mW
PO = 200mW
PO = 100mW
Power dependence of far field pattern
(Perpendicular to junction)
Angle [degree]
–90
–60
–30
0
306090
Radiation
intensity
(optional
scale)
Tth = 25
°C
PO = 500mW
PO = 400mW
PO = 300mW
PO = 200mW
PO = 100mW
相关PDF资料 |
PDF描述 |
|---|---|
| SLD326YT-25 | 810 nm, LASER DIODE |
| SLD326YT-1 | 795 nm, LASER DIODE |
| SLD326YT-21 | 798 nm, LASER DIODE |
| SLD326YT-24 | 807 nm, LASER DIODE |
| SLD327YT-2 | 810 nm, LASER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SLD322XT-1 | 制造商:SONY 制造商全称:Sony Corporation 功能描述:0.5W High Power Laser Diode |
| SLD322XT-2 | 制造商:SONY 制造商全称:Sony Corporation 功能描述:0.5W High Power Laser Diode |
| SLD322XT-21 | 制造商:SONY 制造商全称:Sony Corporation 功能描述:0.5W High Power Laser Diode |
| SLD322XT-24 | 制造商:SONY 制造商全称:Sony Corporation 功能描述:0.5W High Power Laser Diode |
| SLD322XT-25 | 制造商:SONY 制造商全称:Sony Corporation 功能描述:0.5W High Power Laser Diode |
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