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参数资料
| 型号： | SLD322XT |
| 元件分类： | 激光器 |
| 英文描述： | 790 nm, LASER DIODE |
| 封装： | M-273(LO-10), 8 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 83K |
| 代理商： | SLD322XT |
– 4 –
SLD322XT
Temperature dependence of far field pattern
(Perpendicular to junction)
Angle [degree]
–90
–60
–30
0
30
60
90
Radiation
intensity
(optional
scale)
PO = 500mW
Tth = 25
°C
Tth = 10
°C
Tth = –5
°C
790
800
820
810
lp
–
W
avelength
[nm]
Dependence of wavelength
Tth – Thermistor temperature [
°C]
–10
0
102030
Po = 500mW
0
0.5
1.0
η
D
–
Dif
ferential
ef
ficiency
[W/A]
Differential efficiency vs. Temperature characteristics
Tth – Thermistor temperature [
°C]
–10
0
102030
10
5
0
50
0
T [°C]
TE cooler characteristics 2
Q
–
Absorbed
heat
[W]
100
Tth = 25
°C
2.0A
1.5A
2.5A
2.0A
1.5A
1.0A
0.5A
T VS V
T
VS
Q
0.5A
5
4
3
2
1
0
V
T
–
Pin
voltage
[V]
1.0A
IT = 2.5A
0
10
5
0
50
T – Temperature difference [°C]
T: Tc – Tth
Tth: Thermistor temperature
Tc: Case temperature
TE cooler characteristics 1
Q
–
Absorbed
heat
[W]
100
Tc = 33
°C
2.0A
1.5A
2.5A
2.0A
0.5A
1.0A
1.5A
T VS VT
T
V
S Q
0.5A
5
4
3
2
1
0
V
T
–
Pin
voltage
[V]
1.0A
IT = 2.5A
Rth
–
Thermistor
resistance
[k
]
50
10
5
1
–10 0
1020 3040 5060 70
Thermistor characteristics
Tth – Thermistor temperature [
°C]
TE cooler characteristics
相关PDF资料 |
PDF描述 |
|---|---|
| SLD326YT-25 | 810 nm, LASER DIODE |
| SLD326YT-1 | 795 nm, LASER DIODE |
| SLD326YT-21 | 798 nm, LASER DIODE |
| SLD326YT-24 | 807 nm, LASER DIODE |
| SLD327YT-2 | 810 nm, LASER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SLD322XT-1 | 制造商:SONY 制造商全称:Sony Corporation 功能描述:0.5W High Power Laser Diode |
| SLD322XT-2 | 制造商:SONY 制造商全称:Sony Corporation 功能描述:0.5W High Power Laser Diode |
| SLD322XT-21 | 制造商:SONY 制造商全称:Sony Corporation 功能描述:0.5W High Power Laser Diode |
| SLD322XT-24 | 制造商:SONY 制造商全称:Sony Corporation 功能描述:0.5W High Power Laser Diode |
| SLD322XT-25 | 制造商:SONY 制造商全称:Sony Corporation 功能描述:0.5W High Power Laser Diode |
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