参数资料
型号: SLDA-61S10-16
元件分类: 光敏二极管
英文描述: PHOTO DIODE
文件页数: 1/1页
文件大小: 18K
代理商: SLDA-61S10-16
5200 St. Patrick St., Montreal
The Old Railway, Princes Street
Que., H4E 4N9, Canada
Ulverston, Cumbria, LA12 7NQ, UK
Tel: 514-768-8000
Tel: 01 229 581 551
Fax: 514-768-8889
Fax: 01 229 581 554
QF-84
SLDA-61S10-XX Series
Multi-element Photodiode Array
Features
Photodiodes spaced on 0.97 mm centers
Dual solderable anode contacts
Common cathode contact on back of array
Up to 16 elements per monolithic array
Description
The Silonex SLDA-61S10-XX series of photodiode
arrays are monolithic devices that can be used in
precision position sensing applications.
The array
can be easily attached with conductive epoxy to a
ceramic, other substrate or wire soldered to back
side. The conductive epoxy provides the electrical
connection to the common cathode contact.
Absolute Maximum Ratings
Storage Temperature
-40 to +125
°C
Operating Temperature
-40 to +125
°C
Soldering Temperature
260
°C for 2 sec
1.78
1.02
0.97
0.66
0.41
4.47 typ.
Common cathode (back)
Active Area: 1.17 sq. mm.
Dimensions in mm. (+/- 0.013)
Anode
To order this part, the ‘XX’ refers to the number of
elements in the array (from 1 to 16 elements).
Electrical Characteristics (per element, TA=25
°C unless otherwise noted)
Symbol Parameter
Min
Typ
Max
Units
Test Conditions
ISC
Short Circuit Current
60
80
A
VR = 0V, Ee = 25 mW/cm
2 (1)
VOC
Open Circuit Voltage
0.40
V
Ee = 25 mW/cm
2 (1)
ID
Dark Current
3
A
Ee = 0, VR = 1V
VBR
Breakdown Voltage
20
V
IR = 100
A
TCI
Temp. Coef., ISC
+0.2
%/
°C (1)
CJ
Junction Capacitance
100
pF
F = 1 Mhz, VR = 0
λ
P
Maximum Sensitivity Wavelength
930
nm
λ
R
Sensitivity Spectral Range
400
1100
nm
Specifications subject to change without notice.
103075 REV 1
Note:
(1) Ee = light source @ 2854
°K
相关PDF资料
PDF描述
SLDA-61S10-03 PHOTO DIODE
SLDA-61S10-01 PHOTO DIODE
SLDA-61S10-04 PHOTO DIODE
SLDA-61S10-15 PHOTO DIODE
SLDA-61S16-02 PHOTO DIODE
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