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参数资料
| 型号： | SM15T150A/9AT |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| 封装： | PLASTIC, SMCJ, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 82K |
| 代理商： | SM15T150A/9AT |
SM15T Series
Vishay Semiconductors
formerly General Semiconductor
Document Number 88380
www.vishay.com
09-Feb-04
1
Surface Mount TRANSZORB
Transient Voltage Suppressors
Breakdown Voltage 6.8 to 220V
Peak Pulse Power 1500W
Devices for Bidirectional Applications
For bi-directional devices, use suffix CA (e.g. SM15T10CA). Electrical characteristics apply in both directions.
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Peak pulse power dissipation with
PPPM
Minimum 1500
W
a 10/1000
s waveform(1)(2) (Fig. 1)
Peak pulse current with a 10/1000
s waveform(1) (Fig. 3)
IPPM
See Next Table
A
Power dissipation on infinite heatsink, TA = 50°C
PM(AV)
6.5
W
Peak forward surge current 10ms single half sine-wave
IFSM
200
A
uni-directional only (2)
Typical thermal resistance junction to ambient air(3)
RθJA
75
°C/W
Typical thermal resistance junction to leads
RθJL
15
°C/W
Operating junction and storage temperature range
TJ, TSTG
–65 to +150
°C
Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above TA = 25°C per Fig. 2
(2) Mounted on 0.31 x 0.31” (8.0 x 8.0mm) copper pads to each terminal
(3) Mounted on minimum recommended pad layout
Features
Low profile package with built-in strain relief for
surface mounted applications
Glass passivated junction
Low inductance
Excellent clamping capability
1500W peak pulse power capability with a 10/1000
s
waveform, repetition rate (duty cycle): 0.01%
Fast response time: theoretically (with no parisitic
inductance) less than 1ps from 0 Volts to V(BR) for
undirectional and 5ns for bidirectional types
High temperature soldering: 250°C/10 seconds at terminals
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
0.280 (7.11)
0.260 (6.60)
0.012 (0.305)
0.006 (0.152)
0.008
(0.203)
Max.
0.320 (8.13)
0.305 (7.75)
0.060 (1.52)
0.030 (0.76)
0.245 (6.22)
0.220 (5.59)
0.126 (3.20)
0.114 (2.90)
0.103 (2.62)
0.079 (2.06)
Cathode Band
Dimensions in inches
and (millimeters)
DO-214AB (SMC J-Bend)
0.185 MAX.
(4.69 MAX.)
0.126 MIN.
(3.20 MIN.)
0.060 MIN.
(1.52 MIN.)
0.320 REF
Mounting Pad Layout
Mechanical Data
Case: JEDEC DO-214AB (SMC) molded plastic over
passivated junction
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: For uni-directional types the band denotes the
cathode, which is positive with respect to the anode
under normal TVS operation
Standard Packaging: 12mm tape (EIA STD RS-481)
Weight: 0.003 oz., 0.093 g
Packaging Codes – Options (Antistatic):
51 – 1K per Bulk box, 10K/carton
57 – 850 per 7" plastic Reel (16mm tape), 8.5K/carton
9A – 3.5K per 13" plastic Reel (16mm tape), 35K/carton
相关PDF资料 |
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相关代理商/技术参数 |
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| SM15T150A-E3/1T | 功能描述:TVS 二极管 - 瞬态电压抑制器 1.5KW 150V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SM15T150A-E3/51T | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 150V 5% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SM15T150A-E3/57T | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 150V 5% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SM15T150A-E3/59T | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 150V 5% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SM15T150A-E3/9AT | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 150V 5% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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