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参数资料
型号： SM15T150A/9AT
厂商： VISHAY SEMICONDUCTORS
元件分类： TVS二极管 - 瞬态电压抑制
英文描述： 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
封装： PLASTIC, SMCJ, 2 PIN
文件页数： 2/4页
文件大小： 82K
代理商： SM15T150A/9AT
SM15T Series
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88380
2
09-Feb-04
SM15T6V8A
GDE7
5.80
1000
6.45
7.14
10
10.5
143
13.4
746
5.7
SM15T7V5A
GDK7
BDK7
6.40
500
7.13
7.88
10
11.3
132
14.5
690
6.1
SM15T10A
GDT7
BDT7
8.55
10.0
9.50
10.5
1.0
14.5
103
18.6
538
7.3
SM15T12A
GDX7
BDX7
10.2
5.0
11.4
12.6
1.0
16.7
90.0
21.7
461
7.8
SM15T15A
GEG7
12.8
1.0
14.3
15.8
1.0
21.2
71.0
27.2
368
8.4
SM15T18A
GEM7
BEM7
15.3
1.0
17.1
18.9
1.0
25.2
59.5
32.5
308
8.8
SM15T22A
GET7
BET7
18.8
1.0
20.9
23.1
1.0
30.6
49.0
39.3
254
9.2
SM15T24A
GEV7
20.5
1.0
22.8
25.2
1.0
33.2
45.0
42.8
234
9.4
SM15T27A
GEX7
BEX7
23.1
1.0
25.7
28.4
1.0
37.5
40.0
48.3
207
9.6
SM15T30A
GFE7
BFE7
25.6
1.0
28.5
31.5
1.0
41.5
36.0
53.5
187
9.7
SM15T33A
GFG7
28.2
1.0
31.4
34.7
1.0
45.7
33.0
59.0
169
9.8
SM15T36A
GFK7
BFK7
30.8
1.0
34.2
37.8
1.0
49.9
30.0
64.3
156
9.9
SM15T39A
GFM7
BFM7
33.3
1.0
37.1
41.0
1.0
53.9
28.0
69.7
143
10.0
SM15T68A
GGG7
58.1
1.0
64.6
71.4
1.0
92.0
16.3
121
83
10.4
SM15T100A
GGV7
85.5
1.0
95.0
105
1.0
137
11.0
178
56
10.6
SM15T150A
GHK7
128
1.0
143
158
1.0
207
7.20
265
38
10.8
SM15T200A
GHR7
171
1.0
190
210
1.0
274
5.50
353
28
10.8
SM15T220A
GHR8
188
1.0
209
231
1.0
328
4.60
388
26
10.8
Notes:
(1) For bi-directional devices add suffix “CA” instead of “A”
(2) VBR measured after IT applied for 300s square wave pulse
(3) For bipolar devices with VR=10 Volts or under, the IT limit is doubled
Application Notes
A 1500W (SMC) device is normally selected when the threat of transients is from lightning induced transients, conducted via external leads or I/O lines. It is also
used to protect against switching transients induced by large coils or industrial motors. Source impedance at component level in a system is usually high enough
to limit the current within the peak pulse current (IPP) rating of this series. In an overstress condition, the failure mode is a short circuit.
Electrical Characteristics (TA=25C unless otherwise noted)
Type(1)
Device Marking
Code
Uni
Bi
Standoff
Voltage
VRM
(V)
Leakage
Current(3
)
IRM@VR
Breakdown Voltage
VBR @ IT
(2) (V)
Min
Max
Clamping Voltage
VC @ IPP
(10/1000s)
(V)
(A)
Test
Current
IT
(mA)
Clamping Voltage
VC @ IPP
(8/20s)
(V)
(A)
αT
Max
10-4/°C
相关PDF资料
PDF描述
SM15T200A/9AT 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
SM15T200CA/57T 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
SM15T22CA/57T 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
SM15T24CA/57T 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
SM15T27CA/9AT 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
相关代理商/技术参数
参数描述
SM15T150A-E3/1T 功能描述:TVS 二极管 - 瞬态电压抑制器 1.5KW 150V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
SM15T150A-E3/51T 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 150V 5% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
SM15T150A-E3/57T 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 150V 5% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
SM15T150A-E3/59T 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 150V 5% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
SM15T150A-E3/9AT 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 150V 5% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
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