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参数资料
| 型号： | SM2T3V3A |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 200 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-216AA |
| 封装： | STMITE PACKAGE-2 |
| 文件页数： | 1/5页 |
| 文件大小： | 60K |
| 代理商： | SM2T3V3A |
Rev 1
October 2005
1/5
5
SM2T3V3A
Low voltage TRANSIL
Features
■ Unidirectional Transil Diode
■ High peak pulse power : 200 W (10/1000 s)
■ Stand-off voltage 3.3 V
■ Low clamping factor VCL/VBR
■ Fast response time
■ JEDEC registered package outline
Description
The SM2T3V3A is a Transil diode designed
specifically
for
portable
equipment
and
miniaturized electronic devices subject to ESD
transient overvoltages. It's low stand-off voltage
makes it suitable for low voltage applications very
sensitive to EOS and ESD events.
Transil diodes provide high overvoltage protection
by clamping action.
Order code
Absolute rating (limiting value)
TM: TRANSIL is a trademark of STMicroelectronics
Part Number
Marking
SM2T3V3A
MUL
K
A
DO-216AA
(STmite)
Symbol
Parameter
Value
Unit
PPP
Peak pulse power dissipation(1)
1.
10/1000 s pulse waveform
Tj initial = Tamb
200
W
P
Power dissipation on infinite heatsink
Tamb = 100°C
2.5
W
IFSM
Non repetitive surge peak forward current
tp = 10 ms
Tj initial = Tamb
25
A
Tstg
Tj
Storage temperature range
Maximum operating junction temperature
-65 to +175
150
°C
Tl
Lead solder temperature (10 seconds duration)
260
°C
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