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参数资料
| 型号： | SMAJ6.0-E3/2G |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC |
| 封装： | ROHS COMPLIANT, PLASTIC, SMA, 2 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 105K |
| 代理商： | SMAJ6.0-E3/2G |
www.vishay.com
4
Document Number 88390
12-Sep-06
Vishay General Semiconductor
SMAJ5.0 thru SMAJ188CA
Note:
(1) Mounted on minimum recommended pad layout
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Typical thermal resistance, junction to ambient (1)
RθJA
120
°C/W
Typical thermal resistance, junction to lead
RθJL
30
°C/W
ORDERING INFORMATION
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SMAJ5.0A-E3/61
0.064
61
1800
7" Diameter Plastic Tape & Reel
SMAJ5.0A-E3/5A
0.064
5A
7500
13" Diameter Plastic Tape & Reel
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Power or Current versus Initial Junction Temperature
0.1
1
10
100
SMAJ5.0--
SMAJ78
SMAJ85--
SMAJ188
P
PPM
,P
e
ak
P
u
lse
P
o
w
er
(k
W
)
td - Pulse Width (s)
0.2 x 0.2" (0.5 x 0.5 mm)
Copper Pad Areas
Non-repetitive Pulse
Waveform shown in Fig. 3
TA = 25 °C
0.1 s
1.0 s
10 s
100 s
1.0 ms
10 ms
0
255075
100
75
50
25
0
125
150
175
200
TJ - Initial Temperature (°C)
Pe
a
k
P
u
lse
P
o
w
er
(P
PP
)or
C
u
rrent
(I
PP
)
Der
ating
in
P
e
rcentage
,
%
Figure 3. Pulse Waveform
Figure 4. Typical Junction Capacitance
0
50
100
150
td
0
1.0
2.0
3.0
4.0
IPPM
-
P
e
ak
P
u
lse
C
u
rrent,
%
I
RSM
t - Time (ms)
tr = 10 sec
Peak Value
IPPM
Half Value -
IPPM
IPP
2
10/1000 sec Waveform
as defined by R.E.A.
Tj = 25 °C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50 % of IPPM
10
100
1000
10000
10
1
100
200
Uni-Directional
Bi-Directional
Tj = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Measured at
Stand-off
Voltage VWM
C
J,
J
u
nction
Capacitance
(pF)
VWM - Reverse Stand-off Voltage (V)
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