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参数资料
| 型号： | SMB30A300-HE3/5B |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封装： | ROHS COMPLIANT, PLASTIC, SMB, 2 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 92K |
| 代理商： | SMB30A300-HE3/5B |
www.vishay.com
2
Document Number 88476
04-Jul-06
Vishay General Semiconductor
SMB30A300
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ORDERING INFORMATION
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SMB30A300-E3/52
0.096
52
750
7" Diameter Plastic Tape & Reel
SMB30A300-E3/5B
0.096
5B
3200
13" Diameter Plastic Tape & Reel
Figure 1. Pulse Waveform
Figure 2. Reverse Power Capability for TVS
0
50
100
150
Peak Value
IPPM
td
0
1.0
2.0
3.0
4.0
Half Value -
IPPM
IPP
2
IPPM
-
P
e
ak
P
u
lse
C
u
rrent,
%
I
RSM
t - Time (ms)
tr = 10 sec
10/1000 sec Waveform
as defined by R.E.A.
Tj = 25 °C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50 % of IPPM
100
1000
10000
10
100
1000
10000
Re
v
erse
S
u
rge
P
o
w
er
(
W
)
Pulse Width (ms) - IPP Exponential Waveform
Figure 3. Typical Reverse Leakage Current
Figure 4. Typical Transient Thermal Impedance
5 % 15 % 25 % 35 % 45 % 55 % 65 % 75 % 85 % 95 %
1000000
100000
10000
1
0.100
0.010
0.001
Instan
taneo
u
s
Re
v
erse
C
u
rrent
(
A)
Percentage of VBR
Tj = 150 °C, at 300 V
Tj = 150 °C, at 30 V
Tj = 25 °C, at 300 V
Tj = 25 °C, at 30 V
0.1
1.0
10
100
0.001
0.01
0.1
1
10
100
1000
t - Pulse Duration (s)
T
ransient
Ther
mal
Impedance
(°C/
W
)
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