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参数资料
| 型号： | SMBJ3V3HE3/5B |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封装： | ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 94K |
| 代理商： | SMBJ3V3HE3/5B |
SMBJ3V3
Vishay General Semiconductor
Document Number: 88940
Revision: 22-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Surface Mount TRANSZORB Transient Voltage Suppressors
FEATURES
Uni-directional polarity only
Peak pulse power: 600 W (10/1000 s)
Excellent clamping capability
Very fast response time
Meets MSL level 1, per J-STD-020, LF
maximum peak of 260 °C
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
specifically for protecting 3.3 V supplied sensitive
equipment against transient overvoltages.
MECHANICAL DATA
Case: DO-214AA (SMBJ)
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC Q101 qualified)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3
suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
VWM
3.3 V
PPPM
600 W
IFSM
60 A
TJ max.
175 °C
DO-214AA (SMBJ)
Notes:
(1) Non-repetitive current pulse, per Fig. 1
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Peak pulse power dissipation (1)(2)
PPPM
600
W
Peak pulse current with a 10/1000
μs waveform (Fig. 1)
IPP
50
A
Peak pulse current with a 8/20 waveform (Fig. 1)
IPPM
200
A
Non repetitive peak forward surge current 8.3 ms single half sine-wave (2)
IFSM
60
A
Power dissipation on infinite heatsink, TL = 75 °C
PD
5W
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE
TYPE
DEVICE
MARKING
CODE
BREAKDOWN
VOLTAGE
VBR AT IT
MAXIMUM REVERSE
LEAKAGE CURRENT
IR AT VWM
MAXIMUM
CLAMPING
VOLTAGE
VC AT IPP
MAXIMUM
CLAMPING
VOLTAGE
VC AT IPPM
TYPICAL
TEMP.
COEFFICIENT
OF VBR
TYPICAL
JUNCTION
CAPACITANCE
CJ AT 0 V
MIN.
MAX.
10/1000 s
8/20 s
1 MHz
V
mA
A
V
VAVA
(10-4/°C)
pF
SMBJ3V3
KC
4.1
1.0
200
3.3
7.3
50
10.3
200
- 5.3
5200
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SMBJ3V3-M3/52 | 制造商:Vishay Semiconductors 功能描述:600W,3.3V UNIDIR,SMB TVS |
| SMBJ3V3-M3/5B | 制造商:Vishay Semiconductors 功能描述:600W,3.3V UNIDIR,SMB TVS |
| SMBJ40 | 功能描述:TVS 二极管 - 瞬态电压抑制器 40Vr 600W 9.3A 10% UniDirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ40/1 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 40V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ40/2 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 40V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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