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参数资料
| 型号： | SMBJ3V3HE3/5B |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封装： | ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 94K |
| 代理商： | SMBJ3V3HE3/5B |
SMBJ3V3
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88940
Revision: 22-Oct-08
2
Notes:
(1) Thermal resistance from junction to lead - mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
(2) Thermal resistance from junction to ambient - mounted on the recommended P.C.B. pad layout
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Typical thermal resistance, junction to lead (1)
RθJL
20
°C/W
Typical thermal resistance, junction to ambient (2)
RθJA
100
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SMBJ3V3-E3/52
0.096
52
750
7" diameter plastic tape and reel
SMBJ3V3-E3/5B
0.096
5B
3200
13" diameter plastic tape and reel
SMBJ3V3HE3/52 (1)
0.096
52
750
7" diameter plastic tape and reel
SMBJ3V3HE3/5B (1)
0.096
5B
3200
13" diameter plastic tape and reel
Figure 1. Pulse Waveform
Figure 2. Peak Pulse Power Rating Curve
0
50
100
150
t
d
0
1.0
2.0
3.0
4.0
t
r = 8 s
t
r = 10 s
I PPM
-
P
eak
P
u
lse
C
u
rrent,
%
I
RSM
t - Time (ms)
t
d = 1000 s
t
d = 20 s
Peak Value
I
PPM
Half Value -
I
PPM
I
PP
2
T
J = 25 °C
Pulse Width (t
d)
is defined as the Point
where the Peak Current
decays to 50 % of I
PPM
10
1
0.1
0.01
0.1
1
10
P
PPM
-
P
e
ak
P
u
lse
P
o
w
er
(k
W
)
td - Pulse Width (ms)
Figure 3. Relative Variation of Leakage Current vs.
Junction Temperature
Figure 4. Clamping Voltage vs. Peak Pulse Current
(TJ initial = 25 °C)
0.1
1
10
0
25
50
75
100
125
150
175
TJ - Junction T emperature (°C)
I R
(T
J)/
I R
(T
J=
25
°
C
)
4
6
8
10
0.1
1
10
100
1000
IPP (A)
Cl
a
m
p
in
g
V
o
lta
g
e
(
V
)
10/1000 s
8/20 s
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SMBJ3V3-M3/52 | 制造商:Vishay Semiconductors 功能描述:600W,3.3V UNIDIR,SMB TVS |
| SMBJ3V3-M3/5B | 制造商:Vishay Semiconductors 功能描述:600W,3.3V UNIDIR,SMB TVS |
| SMBJ40 | 功能描述:TVS 二极管 - 瞬态电压抑制器 40Vr 600W 9.3A 10% UniDirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ40/1 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 40V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ40/2 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 40V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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