参数资料
| 型号： | SMBJ110A-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | TVS UNI-DIR 110V 600W SMB |
| 产品目录绘图： | SMBJ Series Side SMBJ Series Top |
| 标准包装： | 1 |
| 系列： | SMBJ |
| 电压 - 反向隔离（标准值）： | 110V |
| 电压 - 击穿： | 122V |
| 功率（瓦特）： | 600W |
| 电极标记： | 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | DO-214AA，SMB |
| 供应商设备封装： | SMB |
| 包装： | 标准包装 |
| 其它名称： | SMBJ110ADIDKR |
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Green
SMBJ5.0(C)A - SMBJ170(C)A
600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
Features
Mechanical Data
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600W Peak Pulse Power Dissipation
5.0V - 170V Standoff Voltages
Glass Passivated Die Construction
Uni- and Bi-Directional Versions Available
Excellent Clamping Capability
Fast Response Time
Lead Free Finish/RoHS Compliant (Note 1)
Green Molding Compound (No Halogen and Antimony)
(Note 2)
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Case: SMB
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Lead Free Plating (Matte Tin Finish). Solderable per
MIL-STD-202, Method 208
Polarity Indicator: Cathode Band (Note: Bi-directional devices
have no polarity indicator.)
Marking: Information: See Page 4
Ordering Information: See Page 4
Weight: 0.1 grams (approximate)
Top View
Bottom View
Maximum Ratings
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Peak Pulse Power Dissipation
(Non repetitive current pulse derated above T A = 25 ° C)
(Note 3)
P PK
600
W
Peak Power Derating Above 25°C
Peak Forward Surge Current, 8.3ms Single Half Sine Wave Superimposed
on Rated Load (Notes 3, 4, & 5)
Steady State Power Dissipation @ T L = 75 ° C
P der
I FSM
PM (AV)
4.8
100
5.0
W/ ° C
A
W
Instantaneous Forward Voltage @ I PP = 35A
(Notes 3, 4, & 5)
V BR <100V
V BR ≥ 100V
V F
3.5
5.0
V
V
Thermal Characteristics
Characteristic
Operating Temperature Range
Storage Temperature Range
Symbol
T J
T STG
Value
-55 to +150
-55 to +175
Unit
° C
° C
Notes:
1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied. Please visit our website at http://www.diodes.com/quality/lead_free.html .
2. No purposefully added lead. Halogen and Antimony free.
3. Valid provided that terminals are kept at ambient temperature.
4. Measured with 8.3ms single half sine-wave. Duty cycle = 4 pulses per minute maximum.
5. Unidirectional units only.
SMBJ5.0(C)A - SMBJ170(C)A
Document number: DS19002 Rev. 17 - 2
1 of 5
June 2009
? Diodes Incorporated
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SMBJ110A-13-F | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 110.0V RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ110A-7 | 功能描述:TVS 二极管 - 瞬态电压抑制器 110V 600 Watts RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ110A-7P | 功能描述:TVS 二极管 - 瞬态电压抑制器 110V 600 Watts RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ110AE3 | 制造商:Microsemi Corporation 功能描述:TVS SGL UNI-DIR 110V 600W 2PIN DO-214AA - Bulk |
| SMBJ110A-E3/1 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 110V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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