参数资料
型号: SMBJ3V3-HE3/52
厂商: VISHAY SEMICONDUCTORS
元件分类: TVS二极管 - 瞬态电压抑制
英文描述: 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
封装: ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN
文件页数: 3/4页
文件大小: 94K
代理商: SMBJ3V3-HE3/52
SMBJ3V3
Vishay General Semiconductor
Document Number: 88940
Revision: 22-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 5. Typical Junction Capacitance
Figure 6. Typical Transient Thermal Impedance
2000
2500
3000
3500
4000
4500
5000
5500
0
0.5
1
1.5
2
2.5
3
3.5
Reverse Voltage (V)
C
J
-
J
u
nction
Capacitance
(pF)
100
10
0.01
0.1
1
10
100
1000
t - Pulse Duration (s)
T
ransient
Ther
mal
Impedance
(°C/
W
)
Figure 7. Typical Peak Forward Voltage Drop vs. Peak
Forward Current
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
VF - Forward Voltage Drop (V)
I F
-
Peak
For
w
ard
C
u
rrent
(A)
T
J = 175 °C
T
J = 25 °C
DO-214AA (SMB-J-Bend)
Mounting Pad Layout
0.160 (4.06)
0.180 (4.57)
0.006 (0.152)
0.012 (0.305)
0.030 (0.76)
0.060 (1.52)
0.205 (5.21)
0.220 (5.59)
0 (0)
0.008 (0.2)
0.130 (3.30)
0.155 (3.94)
0.084 (2.13)
0.096 (2.44)
0.077 (1.95)
0.086 (2.20)
Cathode Band
0.220 REF.
0.060 (1.52)
MIN.
0.086 (2.18)
MIN.
0.085 (2.159)
MAX.
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