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参数资料
| 型号： | SMCJ170-W |
| 厂商： | RECTRON LTD |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件页数： | 1/5页 |
| 文件大小： | 35K |
| 代理商： | SMCJ170-W |
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FEATURES
* Plastic package has underwriters laboratory
* Glass passivated chip construction
* 1500 watt surage capability at 1ms
* Excellent clamping capability
* Low zener impedance
* Fast response time
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
oC ambient temperature unless otherwise specified.
TVS
TFMCJ
SERIES
DO-214AB
1500 WATT PEAK POWER 5.0 WATTS STEADY STATE
SURFACE MOUNT GPP
TRANSIENT VOLTAGE SUPPRESSOR
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At TA = 25
oC unless otherwise noted)
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA suffix for types TFMCJ5.0 thru TFMCJ170
Electrical characteristics apply in both direction
2005-9
REV:A
Ratings at 25
oC ambient temperature unless otherwise specified.
3. Lead temperature at TL = 25
oC
NOTES :
2. Mounted on 0.31 X 0.31”( 8.0 X 8.0mm) copper pad to each terminal.
1. Non-repetitive current pulse, per Fig.3 and derated above TA = 25
oC per Fig.2.
4. Measured on 8.3mS single half sine-wave duty cycle = 4 pules per minute maximum.
5. VF = 3.5V on TFMCJ-5.0 thru TFMCJ-90 devices and VF = 5.0V on TFMCJ-100 thru TFMCJ-170 devices.
RATINGS
Steady State Power Dissipation at TL = 75
oC (Note 2)
Peak Pulse Current with a 10/1000uS waveform ( Note 1, Fig.3 )
Maximum Instantaneous Forward Voltage at 100A for unidirectional
only (Note 3,4)
SYMBOL
IFSM
VF
TJ, TSTG
Volts
-55 to + 150
0 C
UNITS
Amps
Peak Power Dissipation with a 10/1000uS (Note 1,2, Fig.1)
Minimum 1500
200
SEE NOTE 3,4
VALUE
Operating and Storage Temperature Range
PPPM
Watts
IPPM
Amps
SEE TABLE 1
Peak Forward Surge Current 8.3mS single half sine-wave
superimposed on rated load (JEDEC method) (Note 2,3)
unidirectional only
PM(AV)
5.0
Watts
0.006 (0.152)
0.012 (0.305)
0.008 (0.203)
0.004 (0.102)
0.320 (8.13)
0.305 (7.75)
0.030 (0.76)
0.060 (1.52)
0.079 (2.06)
0.103 (2.62)
0.260 (6.60)
0.280 (7.11)
0.220 (5.59)
0.245 (6.22)
0.125 (3.17)
0.115 (2.92)
R
θ JA
R
θ JL
6”Fully ROHS compliant”,”100% Sn plating(Pb-free).
75
15
Thermal Resistance Junction to Ambient Air
Thermal Resistance Junction to Leads
0C/W
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相关代理商/技术参数 |
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|---|---|
| SMCJ17A | 功能描述:TVS 二极管 - 瞬态电压抑制器 17volts 5uA 53.3 Amps Uni-Dir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMCJ17A R6 | 制造商:SKMI/Taiwan 功能描述:Diode TVS Single Uni-Dir 17V 1.5KW 2-Pin SMC T/R |
| SMCJ17A | 制造商:Fairchild Semiconductor Corporation 功能描述:TVS Diode 制造商:Fairchild Semiconductor Corporation 功能描述:TVS DIODE, 1.5KW, 17V, DO-214AB |
| SMCJ17A/1T | 制造商:Vishay Intertechnologies 功能描述:Diode TVS Single Uni-Dir 17V 1.5KW 2-Pin SMC Bulk |
| SMCJ17A/51T | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 17V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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