参数资料
型号: SMCJ170-W
厂商: RECTRON LTD
元件分类: TVS二极管 - 瞬态电压抑制
英文描述: 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
封装: ROHS COMPLIANT, PLASTIC PACKAGE-2
文件页数: 2/5页
文件大小: 35K
代理商: SMCJ170-W
RECTRON
RATING AND CHARACTERISTIC CURVES ( TFMCJ5.0 THRU TFMCJ170CA )
FIG. 2 - PULSE DERATING CURVE
PEAK
PULSE
POWER
(PPP)
OR
CURRENT
TA, AMBIENT TEMPERATURE,(
)
025
50
75
100
125
150
175
200
100
75
50
25
0
(IPP)
DERATING
IN
PERCENTAGE,%
Pulse Width (td) is Defined
as the Point Where the Peak
Current Decays to 50% of IPPM
10/1000usec. Waveform
as Defined by R.E.A.
Peak Value
IPPM
tr = 10usec.
FIG. 3 - PULSE WAVEFORM
IPPM
,PEAK
PULSE
CURRENT,%
t, TIME,mS
0
1.0
2.0
3.0
4.0
50
100
150
HALF VALUE -
IPPM
2
td
FIG. 1 - PEAK PULSE POWER RATING CURVE
P
PPM
,PEAK
PULSE
POWER,
KW
TP, PULSE WIDTH, sec
Non-Repetitive
Pulse Waveform
Shown in Fig.3
TA = 25
0.31X0.31"(8.0X8.0mm)
copper pad areas
100
10
1.0
0.1
0.1uS
1.0uS
10uS
100uS
1.0mS
10mS
Measured at
Zero Bias
Measured at
Stand off
Voltage,VWM
f = 1.0 MHz
Vsig = 50mVp-p
TJ = 25
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
C
J,
JUNCTION
CAPACITANCE,pF
V(WM), BREAKDOWN VOLTACE, VOLTS
1.0
10
100
200
10000
1000
100
10
BIDIRECTIONAL
Measured at
Zero Bias
Measured at
Stand off
Voltage,VWM
f = 1.0 MHz
Vsig = 50mVp-p
TJ = 25
FIG. 4 - TYPICAL JUNCTION CAPACITANCE
C
J,
JUNCTION
CAPACITANCE,pF
V(WM), BREAKDOWN VOLTACE, VOLTS
1.0
10
100
200
20000
10000
1000
100
10
UNIDIRECTIONAL
IFSM,
PEAK
FORWARD
SURGE
CURRENT
AMPERES
FIG. 6 - MAXIMUM NON-REPETITIVE FORWARD
NUMBER OF CYCLES AT 60 Hz
200
100
10
1
10
100
8.3ms Single Half Sine-Wave
(JEDED Method)
SURGE CURRENT UNIDIRECTIONAL
Unidirectional only
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