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参数资料
| 型号： | SMF30A/G2 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-219AB |
| 封装： | PLASTIC, SMF, 2 PIN |
| 文件页数： | 3/5页 |
| 文件大小： | 122K |
| 代理商： | SMF30A/G2 |
VISHAY
SMF5.0A to SMF51A
Document Number 85811
Rev. 4, 17-Mar-03
Vishay Semiconductors
www.vishay.com
3
Typical Characteristics (T
amb = 25 °C unless otherwise specified)
Figure 1. Peak Pulse Power Rating
Figure 2. Pulse Derating Curve
Figure 3. Pulse Waveform
P
PPM
-
Peak
Pulse
Power
(kW)
0.1
1
10
0.1
s
1.0
s10s
td - Pulse Width (sec.)
100
s
1.0ms
10ms
Non-repetitive Pulse
Waveform shown in Fig. 3
TA =25 °C
17250
0
25
50
75
100
0
75
25
50
100
125
150
175
200
Peak
Pulse
Power
(P
PP
)
o
r
C
urrent
(I
PPM
)
Derating
in
Percentage,
%
TA - Ambient Temperature (°C)
17251
0
50
100
150
I PPM
-
Peak
Pulse
C
urrent,
%
I RSM
TJ =25 °C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of IPPM
tr = 10 s
Peak Value
IPPM
Half Value - IPP
IPPM
2
td
10/1000 sec. Waveform
as defined by R.E.A.
0
1.0
2.0
3.0
4.0
t - Time (ms)
17252
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SMF30A-GS08 | 功能描述:ESD 抑制器 30 Volt 200 Watt 5% RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C |
| SMF30A-GS18 | 功能描述:ESD 抑制器 30 Volt 200 Watt 5% RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C |
| SMF30A-M | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Surface Mount ESD Protection Diodes |
| SMF30A-M-08 | 制造商:Vishay Semiconductors 功能描述:ESD PROTECTION DIODE SMF DO219-E3-M |
| SMF30A-M-18 | 制造商:Vishay Semiconductors 功能描述:ESD PROTECTION DIODE SMF DO219-E3-M |
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