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参数资料
| 型号： | SMHN3.3AT/R7 |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件页数： | 2/3页 |
| 文件大小： | 0K |
| 代理商： | SMHN3.3AT/R7 |
PAGE . 2
November 04.2010-REV.01
SMHN3.3A / SMHN5.0A
Fig.1 TYPICAL CLAMPING VOLTAGE AT PEAK PULSE
CURRENT(10/1000 s)
m
Fig.1 TYPICAL CLAMPING VOLTAGE AT PEAK PULSE
CURRENT(10/1000 s)
m
Fig.3 PULSE WAVEFORM
T,TIME,ms
I
,PEAK
P
ULSE
C
URRENT
,%
PPM
0
1.0
2.0
3.0
4.0
0
50
100
150
10/1000 u se c Wa ve fo rm
as De fine d b ye R.E.A.
Ha lf Va lue -Ip p
2
e-kt
td
T= 25 C
Pulse Width (td) is Defined
as the Point where the Peak
Current Decayst to 50% of Ipp
A
O
tf = 10usec
Peak Value
Ippm
I
,
Leakage
Current
(
A
)
R
m
PEAK
P
ULSE
C
URRENT
-
I
,A
PP
Fig 2. Typical Reverse Characteristics
1
10
100
0
20
40
60
80
100
120
140
160
T , Junction Temperature (°C)
J
SMHN3.3A
SMHN5.0A
50
55
60
65
70
75
80
66.5
77.5
88.5
9
CLAMPING VOLTAGE -V ,VOLTS
C
SMHN3.3A
SMHN5.0A
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