- 您现在的位置：买卖IC网 > PDF目录54481 > SML60EUZ06BR3 (SEMELAB LTD) 60 A, 600 V, SILICON, RECTIFIER DIODE PDF资料下载
参数资料
| 型号： | SML60EUZ06BR3 |
| 厂商： | SEMELAB LTD |
| 元件分类： | 整流器 |
| 英文描述： | 60 A, 600 V, SILICON, RECTIFIER DIODE |
| 封装： | TO-247CLIP, 2 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 56K |
| 代理商： | SML60EUZ06BR3 |
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Document Number 2386
Issue 1
SML60EUZ06B
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is
believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in
its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Enhanced Ultrafast
Recovery Diode
600 Volt, 60Amp
TECHNOLOGY
The planar passivated and enhanced ultrafast recovery
diode features a triple charge control action utilising
Semelab’s Graded Buffer Zone technology combined with
low emitter efficiency and local lifetime control techniques.
BENEFITS
Very fast recovery for low switching losses
Ultra soft recovery with low EMI generation
High dynamic ruggedness under all conditions
Low temperature dependency
Low on-state losses with positive temperature coefficient
Stable blocking voltage and low leakage current
Avalanche rated for high reliability circuit operation
APPLICATIONS
Freewheeling Diode for IGBTs and MOSFETs
Uninterruptible Power Supplies UPS
Switch Mode Power Supplies SMPS
Inverse and Clamping Diode
Snubber Diode
Fast Switching Rectification
VRRM
Peak Repetitive Reverse Voltage
VR
DC Reverse Blocking Voltage
IFAV
Average Forward Current @Tc = 85°C
IFSM(surge)
Repetitive Forward Current
IFS(surge)
Non-Repetitive Forward Current
PD
Power Dissipation @Tc = 85°C
WAVL
Avalanche Energy
TJ ,TSTG
Operating & Storage Junction Temperature
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
600V
60A
150A
600A
130W
40mJ
-55 to 150°C
Back of Case
Cathode
60EUZ06B
SML
12
1 - Cathode
2 - Anode
See Package outline for mechanical data and more details
TO-247 PACKAGE
Key Parameters
VR
(max)
600V
VF
(typ)
2.1V
IF
(max)
60A
trr
(max)
45ns
相关PDF资料 |
PDF描述 |
|---|---|
| SML60SUZ06BR3 | 60 A, 600 V, SILICON, RECTIFIER DIODE, TO-247 |
| SML60SUZ06S | 60 A, 600 V, SILICON, RECTIFIER DIODE |
| SML75EUZ12TR3 | 75 A, 1200 V, SILICON, RECTIFIER DIODE |
| SMMBD301LT3 | SILICON, VHF-UHF BAND, MIXER DIODE, TO-236AB |
| SMP1307-005 | SILICON, PIN DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SML60H16 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML60H20 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML60J35 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML60J62 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML60L38 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
发布紧急采购，3分钟左右您将得到回复。