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参数资料
| 型号： | SMMBV809LT1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 变容二极管 |
| 英文描述： | UHF BAND, 5.3 pF, 20 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, TO-236AB |
| 封装： | CASE 318-08, TO-236, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 46K |
| 代理商： | SMMBV809LT1 |
MMBV809LT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic All Types
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(IR = 10 mAdc)
V(BR)R
20
Vdc
Reverse Voltage Leakage Current
(VR = 15 Vdc)
IR
50
nAdc
Ct, Diode Capacitance
VR = 2.0 Vdc, f = 1.0 MHz
pF
Q, Figure of Merit
VR = 3.0 Vdc
f = 500 MHz
CR, Capacitance Ratio
C2/C8
f = 1.0 MHz (Note 2)
Device
Min
Typ
Max
Typ
Min
Max
MMBV809LT1
4.5
5.3
6.1
75
1.8
2.6
2. CR is the ratio of Ct measured at 2.0 Vdc divided by Ct measured at 8.0 Vdc.
TYPICAL CHARACTERISTICS
Figure 1. Diode Capacitance
10
8
6
4
2
0
110
15
VR, REVERSE VOLTAGE (VOLTS)
C
T
,DIODE
CAP
ACIT
ANCE
(pF)
Figure 2. Figure of Merit
f, FREQUENCY (GHz)
Figure 3. Series Resistance
TA, AMBIENT TEMPERATURE (°C)
Q,
FIGURE
OF
MERIT
0.1
1000
100
10
1.0
10
C
T
,DIODE
CAP
ACIT
ANCE
(NORMALIZED)
1.04
75
1.02
1.00
0.98
0.96
25
+25
+75
+125
VR = 3.0 Vdc
f = 1.0 MHz
VR = 3 Vdc
TA = 25°C
50
0
+50
+100
1.03
1.01
0.99
0.97
8
23
5
0.5
9
7
5
3
1
4
Figure 4. Diode Capacitance
f, FREQUENCY (GHz)
R
S
,SERIES
RESIST
ANCE
(MHz)
1000
0
600
400
0.4
0.8
1.2
VR = 3.0 Vdc
f = 1.0 MHz
0.2
0.6
1.0
800
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