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参数资料
| 型号： | SMP33A-E3/84A |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-220AA |
| 封装： | ROHS COMPLIANT, PLASTIC, SMP, 2 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 91K |
| 代理商： | SMP33A-E3/84A |
New Product
SMP11 thru SMP36A
Vishay General Semiconductor
Document Number: 88481
Revision: 20-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Derating Curve
Non-Repetitive Pulse
Waveform shown in Fig. 3
T
A = 25 °C
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
10
1
0.1
0.1 s
1.0 s
10 s
100 s
1.0 ms
10 ms
P
PPM
-
P
eak
P
u
lse
P
o
w
er
(k
W
)
td - Pulse Width (s)
100
75
50
25
0
25
50
75
100
125
150
175
200
Pe
a
k
P
u
lse
Po
w
er
(P
PP
)or
C
u
rrent
(I
PP
)
Der
ating
in
P
ercentage
(
%
)
TJ - Initial Temperature (°C)
Figure 3. Pulse Waveform
Figure 4. Typical Junction Capacitance
t
d
t
r = 10 s
Peak Value
I
PPM
Half Value -
I
PPM
I
PP
2
10/1000 s Waveform
as defined by R.E.A.
150
100
50
0
1.0
2.0
3.0
4.0
I PPM
-
P
e
ak
P
u
lse
C
u
rrent,
%
I
RSM
t - Time (ms)
T
J = 25 °C
Pulse Width (t
d)
is defined as the Point
where the Peak Current
decays to 50 % of I
PPM
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
Measured at
Zero Bias
Measured at
Stand-Off
Voltage, V
WM
10 000
1000
100
10
C
J-
J
u
nction
Capacitance
(pF)
VWM - Reverse Stand-Off Voltage (V)
0.000 (0.00)
0.012 (0.30)
0.013 (0.35)
0.004 (0.10)
0.018 (0.45)
0.006 (0.15)
0.045 (1.15)
0.033 (0.85)
0.036 (0.91)
0.024 (0.61)
0.016 (0.40)
0.032 (0.80)
0.053 (1.35)
0.041 (1.05)
0.012 (0.30) REF.
0.105
(2.67)
0.025
(0.635)
0.100
(2.54)
0.030
(0.762)
0.050
(1.27)
Cathode Band
0.142 (3.61)
0.126 (3.19)
0.158 (4.00)
0.146 (3.70)
0.086 (2.18)
0.074 (1.88)
0.087 (2.20)
0.103 (2.60)
DO-220AA (SMP)
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| SMP11-E3/84A | 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-220AA |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SMP33A-M3/84A | 功能描述:TVS 二极管 - 瞬态电压抑制器 400watt 33volt Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMP33A-M3/85A | 功能描述:ESD 抑制器 400watt 33volt 5% Unidir RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C |
| SMP33-E3/84A | 功能描述:TVS 二极管 - 瞬态电压抑制器 400 Watt 33 Volt Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMP33-E3/85A | 功能描述:TVS 二极管 - 瞬态电压抑制器 400W 33V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMP33-M3/84A | 功能描述:ESD 抑制器 400watt 33volt 10% Unidir RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C |
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