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参数资料
| 型号： | SN75HVD1176DG4 |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | Buffer和线驱动 |
| 英文描述： | LINE TRANSCEIVER, PDSO8 |
| 封装： | GREEN, PLASTIC, SOIC-8 |
| 文件页数： | 15/20页 |
| 文件大小： | 636K |
| 代理商： | SN75HVD1176DG4 |
SWITCHING CHARACTERISTICS
SLLS563E – JULY 2003 – REVISED AUGUST 2008 ......................................................................................................................................................... www.ti.com
over recommended operating conditions (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP(
MAX
UNIT
1)
DRIVER
tPLH
Propagation delay time low-level-to-high-level output
4
7
10
ns
tPHL
Propagation delay time high-level-to-low-level output
4
7
10
ns
RL = 54
, CL = 50 pF,
tsk(p)
Pulse skew | tPLH – tPHL |
0
2
ns
See Figure 3
tr
Differential output rise time
2
3
7.5
ns
tf
Differential output fall time
2
3
7.5
ns
tt(MLH), tt(MHL)
Output transition skew
See Figure 4
0.2
1
ns
tp(AZH), tp(BZH)
Propagation delay time, high-impedance-to-active
10
20
ns
tp(AZL), tp(BZL)
output
tp(AHZ), tp(BHZ)
Propagation delay time, active-to- high-impedance
10
20
ns
tp(ALZ), tp(BLZ)
output
RE at 0 V
|tp(AZL) – tp(BZH)|
Enable skew time
0.55
1.5
ns
RL = 110 ,
|tp(AZH) – tp(BZL)|
CL = 50 pF
|tp(ALZ) – tp(BHZ)|
See Figure 7
Disable skew time
2.5
ns
|tp(AHZ) – tp(BLZ)|
tp(AZH), tp(BZH)
Propagation delay time, high-impedance-to-active
1
4
s
tp(AZL), tp(BZL)
output (from sleep mode)
RE at 5 V
tp(AHZ), tp(BHZ)
Propagation delay time, active-output-to
30
50
ns
tp(ALZ), tp(BLZ)
high-impedance (to sleep mode)
Time from application of short-circuit to current
t(CFB)
See Figure 8
0.5
s
foldback
Time from application of short-circuit to thermal
t(TSD)
100
s
shutdown
RECEIVER
tPLH
Propagation delay time, low-to-high level output
20
25
ns
tPHL
Propagation delay time, high-to-low level output
20
25
ns
tsk(p)
Pulse skew | tPLH – tPHL |
See Figure 10
1
2
ns
tr
Receiver output voltage rise time
2
4
ns
tf
Receiver output voltage fall time
2
4
ns
Propagation delay time, high-impedance-to-high-level
tPZH
20
ns
output
DE at VCC,
See Figure 13
Propagation delay time, high-level-to-high-impedance
20
tPHZ
ns
output
Propagation delay time, high-impedance-to-low-level
tPZL
20
ns
output
DE at VCC,
See Figure 14
Propagation delay time, low-level-to-high-impedance
20
tPLZ
ns
output
Propagation delay time, high-impedance-to-high-level
tPZH
1
4
s
output (standby to active)
DE at 0 V,
See Figure 12
Propagation delay time, high-level-to-high-impedance
tPHZ
13
20
ns
output (active to standby)
Propagation delay time, high-impedance-to-low-level
tPZL
2
4
s
output (standby to active)
DE at 0 V,
See Figure 12
Propagation delay time, low-level-to-high-impedance
tPLZ
13
20
ns
output (active to standby)
(1)
All typical values are at VCC = 5 V and 25°C.
4
Copyright 2003–2008, Texas Instruments Incorporated
Product Folder Link(s): SN65HVD1176 SN75HVD1176
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SN75HVD1176DR | 功能描述:RS-485接口IC PROFIBUS RS-485 Transceiver RoHS:否 制造商:Texas Instruments 数据速率:250 Kbps 工作电源电压:3.3 V 电源电流:750 uA 工作温度范围:- 40 C to + 125 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| SN75HVD1176DRG4 | 功能描述:总线收发器 PROFIBUS RS-485 Transceiver RoHS:否 制造商:Fairchild Semiconductor 逻辑类型:CMOS 逻辑系列:74VCX 每芯片的通道数量:16 输入电平:CMOS 输出电平:CMOS 输出类型:3-State 高电平输出电流:- 24 mA 低电平输出电流:24 mA 传播延迟时间:6.2 ns 电源电压-最大:2.7 V, 3.6 V 电源电压-最小:1.65 V, 2.3 V 最大工作温度:+ 85 C 封装 / 箱体:TSSOP-48 封装:Reel |
| SN75HVD11D | 功能描述:RS-485接口IC 3.3V Differential Transceivers RoHS:否 制造商:Texas Instruments 数据速率:250 Kbps 工作电源电压:3.3 V 电源电流:750 uA 工作温度范围:- 40 C to + 125 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| SN75HVD11DG4 | 功能描述:总线收发器 3.3V Differential Transceivers RoHS:否 制造商:Fairchild Semiconductor 逻辑类型:CMOS 逻辑系列:74VCX 每芯片的通道数量:16 输入电平:CMOS 输出电平:CMOS 输出类型:3-State 高电平输出电流:- 24 mA 低电平输出电流:24 mA 传播延迟时间:6.2 ns 电源电压-最大:2.7 V, 3.6 V 电源电压-最小:1.65 V, 2.3 V 最大工作温度:+ 85 C 封装 / 箱体:TSSOP-48 封装:Reel |
| SN75HVD11DR | 功能描述:RS-485接口IC 3.3V Differential Transceivers RoHS:否 制造商:Texas Instruments 数据速率:250 Kbps 工作电源电压:3.3 V 电源电流:750 uA 工作温度范围:- 40 C to + 125 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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