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参数资料
| 型号： | SP3011-06UTG |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封装： | 3.50 X 1.35 MM, 0.50 MM HEIGHT, GREEN, PLASTIC, MO-223, UDFN-14 |
| 文件页数： | 2/4页 |
| 文件大小： | 1159K |
| 代理商： | SP3011-06UTG |
2011 Littelfuse, Inc.
Specifications are subject to change without notice.
Please refer to www.littelfuse.com/SPA for current information.
110
TVS Diode Arrays (SPAFamily of Products)
Revision: August 8, 2011
SP3011 Series
Low Capacitance ESD Protection - SP3011 Series
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Absolute Maximum Ratings
Symbol
Parameter
Value
Units
I
PP
Peak Current (t
p=8/20μs)
3.0
A
T
OP
Operating Temperature
-40 to 85
°C
T
STOR
Storage Temperature
-60 to 150
°C
Electrical Characteristics (T
OP=25C)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
ReverseStandoffVoltage
V
RWM
I
R≤1A
6.0
V
ReverseLeakageCurrent
I
LEAK
V
R=5V,AnyI/OtoGND
0.1
0.5
A
Clamp Voltage1
V
C
I
PP=1A,tp=8/20s,Fwd
11.0
V
I
PP=2A,tp=8/20s,Fwd
12.5
V
DynamicResistance
R
DYN
(V
C2-VC1) / (IPP2-IPP1)
1.5
Ω
ESDWithstandVoltage1
V
ESD
IEC61000-4-2 (Contact)
±8
kV
IEC61000-4-2(Air)
±15
kV
Diode Capacitance1
C
I/O-GND
ReverseBias=0V
0.4
pF
Note:1 Parameter is guaranteed by design and/or device characterization.
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
110%
0.05.0
10.0
15.020.025.030.0
Time ( s)
Pe
rc
en
tof
I
PP
Insertion Loss (S21) I/O to GND
Capacitance vs. Bias Voltage
Clamping Voltage vs. I
PP
0.0
0.1
0.2
0.3
0.4
0.5
0.0
1.0
2.0
3.0
4.0
5.0
Bias Voltage (V)
Capacitance
(pF)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
1.01.5
2.02.5
3.0
Peak Pulse Current - I
PP (A)
Cl
am
p
Vo
ltage
(V
C)
-30
-25
-20
-15
-10
-5
0
10
100
1000
10000
Frequency (MHz)
At
te
nuat
ion
(d
B)
Pulse Waveform
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