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参数资料
| 型号： | SPA12N50C3 |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Cool MOS⑩ Power Transistor |
| 中文描述： | 酷马鞍山⑩功率晶体管 |
| 文件页数： | 12/13页 |
| 文件大小： | 365K |
| 代理商： | SPA12N50C3 |
2004-03-29
Rev. 2.1
Page 12
SPP12N50C3, SPB12N50C3
SPI12N50C3, SPA12N50C3
P-TO-262-3-1 (I
2
-PAK)
10
±0.2
0...0.3
B
A
0.25
M
Typical
Metal surface min. X = 7.25, Y = 6.9
All metal surfaces tin plated, except area of cut.
2.54
3 x 0.75
±0.1
1.05
1.27
B
9
0.05
1)
C
1
C
2.4
0.5
±0.1
±
4
1
±
±
1
8.5
1)
2 x
4.4
7
1
0...0.15
2.4
A
P-TO-220-3-31 (FullPAK)
Please refer to mounting instructions (application note AN-TO220-3-31-01)
相关PDF资料 |
PDF描述 |
|---|---|
| SPP12N50C3 | Cool MOS⑩ Power Transistor |
| SPB160N04S2L-03 | OptiMOS Power-Transistor |
| SPB160N04S2-03 | OptiMOS Power-Transistor |
| SPB16N50C3 | Cool MOS⑩ Power Transistor |
| SPP16N50C3 | Cool MOS⑩ Power Transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SPA12N50C3XKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 500V 11.6A 3-Pin(3+Tab) TO-220FP 制造商:Infineon Technologies AG 功能描述:COOL MOS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 560V 11.6A TO220FP |
| SPA13003 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications |
| SPA-1318 | 制造商:RF Micro Devices Inc 功能描述:IC AMP HBT GAAS 2150MHZ 8-SOIC |
| SPA-1318Z | 制造商:RF Micro Devices Inc 功能描述:IC AMP HBT GAAS 2150MHZ 8-SOIC |
| SPA-1426Z | 制造商:RFMD 制造商全称:RF Micro Devices 功能描述:0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER |
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