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参数资料
| 型号： | SPA12N50C3 |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Cool MOS⑩ Power Transistor |
| 中文描述： | 酷马鞍山⑩功率晶体管 |
| 文件页数： | 2/13页 |
| 文件大小： | 365K |
| 代理商： | SPA12N50C3 |
2004-03-29
Rev. 2.1
Page 2
SPP12N50C3, SPB12N50C3
SPI12N50C3, SPA12N50C3
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
V
DS
= 400 V,
I
D
= 11.6 A,
T
j
= 125 °C
d
v
/d
t
50
V/ns
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
-
typ.
-
max.
1
Thermal resistance, junction - case
R
thJC
R
thJC_FP
R
thJA
R
thJA_FP
R
thJA
K/W
Thermal resistance, junction - case, FullPAK
-
-
3.8
Thermal resistance, junction - ambient, leaded
-
-
62
Thermal resistance, junction - ambient, FullPAK
-
-
80
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
3)
-
-
-
35
62
-
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
4)
T
sold
-
-
260
°C
Electrical Characteristics,
at
T
j=25°C unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
-
max.
-
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0V,
I
D
=0.25mA
V
(BR)DS
500
-
V
Drain-Source avalanche
breakdown voltage
V
GS
=0V,
I
D
=11.6A
600
-
Gate threshold voltage
Zero gate voltage drain current
V
GS(th)
I
DSS
I
D
=500
μ
A,
V
GS=VDS
V
DS
=500V,
V
GS
=0V,
T
j
=25°C
T
j
=150°C
2.1
3
3.9
-
-
0.1
-
1
100
μA
Gate-source leakage current
I
GSS
V
GS
=20V,
V
DS
=0V
-
-
100
nA
Drain-source on-state resistance
R
DS(on)
V
GS
=10V,
I
D
=7A
T
j
=25°C
T
j
=150°C
-
-
0.34
0.92
0.38
-
Gate input resistance
R
G
f
=1MHz, open drain
-
1.4
-
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相关代理商/技术参数 |
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| SPA12N50C3XKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 500V 11.6A 3-Pin(3+Tab) TO-220FP 制造商:Infineon Technologies AG 功能描述:COOL MOS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 560V 11.6A TO220FP |
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| SPA-1318Z | 制造商:RF Micro Devices Inc 功能描述:IC AMP HBT GAAS 2150MHZ 8-SOIC |
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