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参数资料
| 型号： | SPB04N60S5 |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Cool MOS⑩ Power Transistor |
| 中文描述： | 酷马鞍山⑩功率晶体管 |
| 文件页数： | 2/14页 |
| 文件大小： | 164K |
| 代理商： | SPB04N60S5 |
2002-08-12
Page 2
SPP04N60C2, SPB04N60C2
SPA04N60C2
Final data
Thermal Characteristics
Parameter
Symbol
Values
typ.
Unit
min.
max.
Characteristics
Thermal resistance, junction - case
Thremal resistance, junction - case, FullPAK
Thermal resistance, junction - ambient, leaded
Thermal resistance, junction - ambient, FullPAK
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
3)
R
thJC
R
thJC_FP
R
thJA
R
thJA_FP
R
thJA
-
-
-
-
-
-
-
-
2.5
4
62
80
K/W
-
-
-
35
62
-
Linear derating factor
Linear derating factor, FullPAK
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
-
-
-
-
-
-
0.4
0.25
260
W/K
T
sold
°C
Electrical Characteristics
, at
T
j
= 25 °C, unless otherwise specified
Static Characteristics
Drain-source breakdown voltage
V
GS
=0V,
I
D
=0.25mA
Drain-source avalanche breakdown voltage
V
(BR)DSS
600
-
-
V
V
GS
=0V,
I
D
=4.5A
Gate threshold voltage,
V
GS
=
V
DS
I
D
=200μA,
T
j
=25°C
Zero gate voltage drain current
V
(BR)DS
-
700
-
V
GS(th)
3.5
4.5
5.5
V
DS
= 600 V,
V
GS
= 0 V,
T
j
= 25 °C
V
DS
= 600 V,
V
GS
= 0 V,
T
j
= 150 °C
Gate-source leakage current
I
DSS
-
-
0.5
-
1
50
μA
V
GS
=20V,
V
DS
=0V
Drain-source on-state resistance
I
GSS
-
-
100
nA
V
GS
=10V,
I
D
=2.8A,
T
j
=25°C
Gate input resistance
f
= 1 MHz, open drain
R
DS(on)
-
0.85
0.95
R
G
-
0.95
-
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