- 您现在的位置：买卖IC网 > PDF目录374886 > SPB07N60C2 (INFINEON TECHNOLOGIES AG) Cool MOS⑩ Power Transistor PDF资料下载
参数资料
| 型号： | SPB07N60C2 |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Cool MOS⑩ Power Transistor |
| 中文描述： | 酷马鞍山⑩功率晶体管 |
| 文件页数： | 3/14页 |
| 文件大小： | 159K |
| 代理商： | SPB07N60C2 |
2002-08-12
Page 3
SPP07N60C2, SPB07N60C2
SPA07N60C2
Final data
Electrical Characteristics
Parameter
Symbol
Conditions
Values
typ.
Unit
min.
max.
Characteristics
Transconductance
g
fs
V
DS
≥
2*
I
D
*
R
DS(on)max
,
I
D
=4.6A
-
4
-
S
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance,
4)
energy related
Effective output capacitance,
5)
time related
C
iss
C
oss
C
rss
C
o(er)
V
GS
=0V,
V
DS
=25V,
f
=1MHz
-
-
-
-
970
370
10
30
-
-
-
-
pF
V
GS
=0V,
V
DS
=0V to 480V
C
o(tr)
-
55
-
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
t
d(on)
t
r
t
d(off)
t
f
V
DD
=380V,
V
GS
=0/13V,
I
D
=7.3A,
R
G
=12
,
T
j
=125°C
-
-
-
-
11
33
47
9
-
-
ns
70
13.5
Q
gs
Q
gd
Q
g
V
DD
=350V,
I
D
=7.3A
-
-
-
7.5
16.5
27
-
-
nC
V
DD
=350V,
I
D
=7.3A,
V
GS
=0 to 10V
35
Gate plateau voltage
V
(plateau)
V
DD
=350V,
I
D
=7.3A
-
8
-
V
1Limited only by maximum temperature
2Repetitve avalanche causes additional power losses that can be calculated as
P
AV
=
E
AR
*
f
.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 μm thick) copper area for drain
connection. PCB is vertical without blown air.
4
C
o(er)
is a fixed capacitance that gives the same stored energy as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS
.
5
C
o(tr)
is a fixed capacitance that gives the same charging time as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS
.
相关PDF资料 |
PDF描述 |
|---|---|
| SPB07N60C3 | Cool MOS⑩ Power Transistor |
| SPB07N60S5 | Cool MOS⑩ Power Transistor |
| SPA07N60C2 | Cool MOS⑩ Power Transistor |
| SPA07N60C3 | Cool MOS⑩ Power Transistor |
| SPP07N60C2 | Cool MOS⑩ Power Transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SPB07N60C3 | 功能描述:MOSFET COOL MOS N-CH 650V 7.3A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SPB07N60C3_05 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated |
| SPB07N60C3ATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 600V 7.3A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:COOL MOS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 650V 7.3A D2PAK |
| SPB07N60S5 | 功能描述:MOSFET COOL MOS N-CH 600V 7.3A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SPB07N60S5_05 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:Cool MOS Power Transistor |
发布紧急采购，3分钟左右您将得到回复。