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参数资料
| 型号： | SPB07N60C2 |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Cool MOS⑩ Power Transistor |
| 中文描述： | 酷马鞍山⑩功率晶体管 |
| 文件页数： | 4/14页 |
| 文件大小： | 159K |
| 代理商： | SPB07N60C2 |
2002-08-12
Page 4
SPP07N60C2, SPB07N60C2
SPA07N60C2
Final data
Electrical Characteristics
Parameter
Symbol
Conditions
Values
typ.
Unit
min.
max.
Characteristics
Inverse diode continuous
forward current
I
S
T
C
=25°C
-
-
7.3
A
Inverse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Peak rate of fall of reverse
recovery current
I
SM
-
-
14.6
V
SD
t
rr
Q
rr
I
rrm
di
rr
/dt
V
GS
=0V,
I
F
=
I
S
-
-
-
-
-
1
1.2
1275
-
-
-
V
ns
μC
A
A/μs
V
R
=350V,
I
F
=
I
S
,
d
i
F
/d
t
=100A/μs
750
4.9
18
550
T
j
=25°C
Typical Transient Thermal Characteristics
Symbol
Value
SPP_B
Unit
Symbol
Value
Unit
SPA
0.024
0.047
0.065
0.177
0.457
2.516
SPA
0.00012
0.000455
0.000638
0.00144
0.00737
0.412
R
th1
R
th2
R
th3
R
th4
R
th5
R
th6
0.024
0.052
0.065
0.172
0.208
0.076
K/W
C
th1
C
th2
C
th3
C
th4
C
th5
C
th6
0.0001354
0.0004561
0.0007717
0.001013
0.00738
0.068
Ws/K
SPP_B
External Heatsink
T
j
T
case
T
amb
C
th1
C
th2
R
th1
R
th,n
C
th,n
P
tot
(t)
相关PDF资料 |
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|---|---|
| SPB07N60C3 | Cool MOS⑩ Power Transistor |
| SPB07N60S5 | Cool MOS⑩ Power Transistor |
| SPA07N60C2 | Cool MOS⑩ Power Transistor |
| SPA07N60C3 | Cool MOS⑩ Power Transistor |
| SPP07N60C2 | Cool MOS⑩ Power Transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SPB07N60C3 | 功能描述:MOSFET COOL MOS N-CH 650V 7.3A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SPB07N60C3_05 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated |
| SPB07N60C3ATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 600V 7.3A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:COOL MOS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 650V 7.3A D2PAK |
| SPB07N60S5 | 功能描述:MOSFET COOL MOS N-CH 600V 7.3A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SPB07N60S5_05 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:Cool MOS Power Transistor |
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