参数资料
型号: SPB07N60S5
厂商: INFINEON TECHNOLOGIES AG
英文描述: Cool MOS⑩ Power Transistor
中文描述: 酷马鞍山⑩功率晶体管
文件页数: 3/14页
文件大小: 159K
代理商: SPB07N60S5
2002-08-12
Page 3
SPP07N60C2, SPB07N60C2
SPA07N60C2
Final data
Electrical Characteristics
Parameter
Symbol
Conditions
Values
typ.
Unit
min.
max.
Characteristics
Transconductance
g
fs
V
DS
2*
I
D
*
R
DS(on)max
,
I
D
=4.6A
-
4
-
S
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance,
4)
energy related
Effective output capacitance,
5)
time related
C
iss
C
oss
C
rss
C
o(er)
V
GS
=0V,
V
DS
=25V,
f
=1MHz
-
-
-
-
970
370
10
30
-
-
-
-
pF
V
GS
=0V,
V
DS
=0V to 480V
C
o(tr)
-
55
-
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
t
d(on)
t
r
t
d(off)
t
f
V
DD
=380V,
V
GS
=0/13V,
I
D
=7.3A,
R
G
=12
,
T
j
=125°C
-
-
-
-
11
33
47
9
-
-
ns
70
13.5
Q
gs
Q
gd
Q
g
V
DD
=350V,
I
D
=7.3A
-
-
-
7.5
16.5
27
-
-
nC
V
DD
=350V,
I
D
=7.3A,
V
GS
=0 to 10V
35
Gate plateau voltage
V
(plateau)
V
DD
=350V,
I
D
=7.3A
-
8
-
V
1Limited only by maximum temperature
2Repetitve avalanche causes additional power losses that can be calculated as
P
AV
=
E
AR
*
f
.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 μm thick) copper area for drain
connection. PCB is vertical without blown air.
4
C
o(er)
is a fixed capacitance that gives the same stored energy as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS
.
5
C
o(tr)
is a fixed capacitance that gives the same charging time as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS
.
相关PDF资料
PDF描述
SPA07N60C2 Cool MOS⑩ Power Transistor
SPA07N60C3 Cool MOS⑩ Power Transistor
SPP07N60C2 Cool MOS⑩ Power Transistor
SPP07N60C3 Cool MOS⑩ Power Transistor
SPP07N60S5 Cool MOS⑩ Power Transistor
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