参数资料
型号: SPB07N60S5
厂商: INFINEON TECHNOLOGIES AG
英文描述: Cool MOS⑩ Power Transistor
中文描述: 酷马鞍山⑩功率晶体管
文件页数: 8/14页
文件大小: 159K
代理商: SPB07N60S5
2002-08-12
Page 8
SPP07N60C2, SPB07N60C2
SPA07N60C2
Final data
13 Forward characteristics of body diode
I
F
=
f
(V
SD
)
parameter:
T
j , t
p
= 10 μs
2
10
0
0.4
0.8
1.2
1.6
2
2.4
V
3
V
SD
-1
10
0
10
1
10
A
SPP07N60C2
I
F
T
j
= 25 °C typ
T
j
= 150 °C typ
T
j
= 25 °C (98%)
T
j
= 150 °C (98%)
14 Typ. switching time
t
=
f
(
I
D
), inductive load,
T
j
=125°C
par.:
V
DS
=380V,
V
GS
=0/+13V,
R
G
=12
0
2
4
6
8
10
12
14
A
I
D
18
0
10
1
10
2
10
3
10
ns
t
t
r
t
f
t
d(off)
t
d(on)
15 Typ. switching time
t
=
f
(
R
G
), inductive load,
T
j
=125°C
par.:
V
DS
=380V,
V
GS
=0/+13V,
I
D
=7.3 A
0
20
40
60
80
100
140
R
G
0
10
1
10
2
10
3
10
ns
t
t
d(on)
t
d(off)
t
r
t
f
16 Typ. switching losses
1)
E
=
f
(
I
D
), inductive load,
T
j
=125°C
par.:
V
DS
=380V,
V
GS
=0/+13V,
R
G
=12
0
2
4
6
8
10
12
A
16
I
D
0
0.05
0.1
0.15
0.2
0.25
0.3
mWs
0.4
E
*)
E
on
includes SDP06S60 diode
commutation losses.
1
This chart helps to estimate
the switching power losses.
The values can be different
under other operating conditions.
E
on
*
E
off
相关PDF资料
PDF描述
SPA07N60C2 Cool MOS⑩ Power Transistor
SPA07N60C3 Cool MOS⑩ Power Transistor
SPP07N60C2 Cool MOS⑩ Power Transistor
SPP07N60C3 Cool MOS⑩ Power Transistor
SPP07N60S5 Cool MOS⑩ Power Transistor
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