参数资料
型号: SPB160N04S2-03
厂商: INFINEON TECHNOLOGIES AG
英文描述: OptiMOS Power-Transistor
中文描述: 的OptiMOS功率晶体管
文件页数: 2/8页
文件大小: 297K
代理商: SPB160N04S2-03
2003-05-22
Page 2
SPB160N04S2L-03
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
R
thJC
R
thJA
R
thJA
-
-
0.5
K/W
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
-
-
62
@ min. footprint
@ 6 cm
2
cooling area
3)
-
-
-
-
62
40
Electrical Characteristics
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS
=0V,
I
D
=1mA
V
(BR)DSS
40
-
-
V
Gate threshold voltage,
V
GS
=
V
DS
I
D
=250μA
V
GS(th)
1.2
1.6
2
Zero gate voltage drain current
V
DS
=40V,
V
GS
=0V,
T
j
=25°C
V
DS
=40V,
V
GS
=0V,
T
j
=125°C
I
DSS
-
-
0.01
1
1
100
μA
Gate-source leakage current
V
GS
=20V,
V
DS
=0V
Drain-source on-state resistance
I
GSS
-
1
100
nA
V
GS
=4.5V,
I
D
=80A
R
DS(on)
-
2.7
3.7
m
Drain-source on-state resistance
V
GS
=10V,
I
D
=80A
R
DS(on)
-
2.1
2.7
1Current limited by bondwire ; with an
R
thJC
= 0.5K/W the chip is able to carry
I
D
= 243A at 25°C, for detailed
information see app.-note ANPS071E available at
www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 μm thick) copper area for drain
connection. PCB is vertical without blown air.
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