参数资料
型号: SPC5566MVR144
厂商: Freescale Semiconductor
文件页数: 19/54页
文件大小: 0K
描述: MCU 3MB FLASH 144MHZ 416-PBGA
标准包装: 200
系列: MPC55xx Qorivva
核心处理器: e200z6
芯体尺寸: 32-位
速度: 144MHz
连通性: CAN,EBI/EMI,以太网,SCI,SPI
外围设备: DMA,POR,PWM,WDT
输入/输出数: 256
程序存储器容量: 3MB(3M x 8)
程序存储器类型: 闪存
RAM 容量: 128K x 8
电压 - 电源 (Vcc/Vdd): 1.35 V ~ 1.65 V
数据转换器: A/D 40x12b
振荡器型: 外部
工作温度: -40°C ~ 125°C
封装/外壳: 416-BBGA
包装: 托盘
MPC5510 Microcontroller Family Data Sheet, Rev. 3
Electrical Characteristics
Freescale Semiconductor
26
21
VRL to VSSA Differential Voltage
VRL – VSSA
– 100
100
mV
22
VSS to VSSA Differential Voltage
VSS – VSSA
– 100
100
mV
23
VSSSYN to VSS Differential Voltage
VSSSYN – VSS
–50
50
mV
24
VDDR to VDDA Differential Voltage
VDDR – VDDA
– 100
100
mV
25
Slew rate on VDDA, VDDR, and VDDE power supply pins9
Vramp
1
100
V/ms
26
Capactive Supply Load
VDD
VDD33
VDDSYN
Vload
800
200
nF
relation between ambient temperature TA and device junction temperature TJ.
2 M parts can’t go above 66 MHz.
3 V
PP can drop to 0 volts during read-only operations and before entry to Sleep mode, to reduce power consumption.
4 V
DDE1, VDDE2, and VDDE3 are separate power segments and may be powered independently with no differential voltage
constraints between the power segments.
5 If V
DDE1 is below VDDA than the analog input limits (spec #9 (Analog (AE/A) Input Voltage) in Table 6) will be based on the
VDDE1 voltage level.
6 Absolute value of current, measured at V
IL and VIH.
7 Weak pull up/down inactive. Measured at V
DDE = 5.25 V. Applies to pad types: SH and MH.
8 Maximum leakage occurs at maximum operating temperature. Leakage current decreases by approximately one-half for each
8 to 12 oC, in the ambient temperature range of 50 to 125 oC. Applies to pad types: A and AE.
9 This applies to the ramp up rate from 0.3 volts to 3.0 volts.
Table 6. DC Electrical Specifications (continued)
Num
Characteristic
Symbol
Min
Max
Unit
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