- 您现在的位置：买卖IC网 > PDF目录40373 > SPD1002TXV (SOLID STATE DEVICES INC) 2 A, 100 V, SILICON, RECTIFIER DIODE PDF资料下载
参数资料
| 型号： | SPD1002TXV |
| 厂商： | SOLID STATE DEVICES INC |
| 元件分类： | 整流器 |
| 英文描述： | 2 A, 100 V, SILICON, RECTIFIER DIODE |
| 封装： | HERMETIC SEALED PACKAGE-2 |
| 文件页数： | 1/2页 |
| 文件大小： | 152K |
| 代理商： | SPD1002TXV |
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number/Ordering Information 1/
SPD
__
└
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV
S = S Level
│
└
Package Type
__ = Axial Leaded
SMS = Surface Mount Square Tab
│
└
Family/Voltage
0802 = 80 V
0902 = 90 V
1002 = 100 V
SPD0802 and SMS
thru
SPD1002 and SMS
2 AMP
80 - 100 VOLTS
SCHOTTKY
RECTIFIER
Features:
PIV to 100 Volts
Extremely Low Forward Voltage Drop
Low Reverse Leakage Current
High Surge Capacity
HV/Replacement for 1N5817 - 1N5819 Series
Hermetically Sealed
TX, TXV, and Space Level Screening Available
2/
Category III metallurgical bond per MIL PRF
19500 appendix A
Maximum Ratings
Symbol
Value
Units
Reverse Voltage
SPD0802 & SMS
SPD0902 & SMS
SPD1002 & SMS
VRRM
VRWM
VR
80
90
100
Volts
Average Rectified Forward Current
(Resistive Load, 60Hz, Sine Wave, TL or TE = 55 oC)
Io
2
Amps
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, allow
junction to reach equilibrium between pulses, TA = 25oC)
IFSM
40
Amps
Operating and Storage Temperature Range
TOP & TSTG
-55 to +250
C
Maximum Thermal Resistance
Junction to Lead, L = .25" (Axial Lead)
Junction to End Tab (Surface Mount)
RθJL
RθJE
15
12
C/W
NOTES:
1/ For Ordering Information, Price, and Availability- Contact Factory.
2/ Screening Based on MIL-PRF-19500. Screening Flows Available on
Request.
Axial Lead
Surface Mount
Square Tab
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0006E
DOC
相关PDF资料 |
PDF描述 |
|---|---|
| SPD0802S | 2 A, 80 V, SILICON, RECTIFIER DIODE |
| SPD0902SMSTX | 2 A, 90 V, SILICON, RECTIFIER DIODE |
| SPD10192RS | 35 A, 800 V, SILICON, RECTIFIER DIODE, DO-5 |
| SPD10192R | 35 A, 800 V, SILICON, RECTIFIER DIODE, DO-5 |
| SPD10195S | 35 A, 1100 V, SILICON, RECTIFIER DIODE, DO-5 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SPD100480Y3J | 制造商:Eaton Corporation 功能描述:SPD, 100KA, STD W/COUNTER PKG., MCC APPLICATION |
| SPD100G | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Smartec Pressure Sensor |
| SPD100N03S2L-04 | 功能描述:MOSFET N-CH 30V 100A DPAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:OptiMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| SPD100N03S2L04T | 功能描述:MOSFET N-CH 30V 100A DPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:OptiMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| SPD1014 | 制造商:Microsemi Corporation 功能描述:CUST P/N 12325177 (JOANNE) - Bulk |
发布紧急采购，3分钟左右您将得到回复。